Low on resistance, High speed switching Expanded Lineup of P-channel MOSFET
Parts

Low on resistance, High speed switching Expanded Lineup of P-channel MOSFET

Torex Semiconductor Ltd. has launched the XP231P02013R and XP232P05013R as new series of MOSFET. XP231P02013R (-30V Withstand Voltage) and XP232P05013R (-30V Withstand Voltage) are general-purpose P-channel MOSFET with low on resistance and high speed switching. It can be used for...

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Fundamentals of MOSFET and IGBT Gate Driver Circuits
Basic Electronics

Fundamentals of MOSFET and IGBT Gate Driver Circuits

The main purpose of this application report is to demonstrate a systematic approach to design high-performance gate drive circuits for high-speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design...

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High-Efficiency, 28V, 2A, 430kHz, Synchronous Step-Down DC-DC in SOT583
IC

High-Efficiency, 28V, 2A, 430kHz, Synchronous Step-Down DC-DC in SOT583

The MP2328 from Monolithic Power Systems is a fully-integrated high-frequency, step-down dc-dc converter with internal power MOSFETs and synchronous rectification. It offers a very compact solution to achieve a 2A continuous output current over a wide input range, with excellent load...

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CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility
High Voltage

CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility

CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET...

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CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
Parts

CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications

Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of...

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Nexperia Releases its 0.57 mili-Ohm Product in LFPAK56 Packaging
IC

Nexperia Releases its 0.57 mili-Ohm Product in LFPAK56 Packaging

Nexperia announced the release of its lowest-ever RDS(on) power MOSFET, the PSMNR51-25YLH, exhibits a value of 0.57mΩ at 25V. Based on NextPowerS3 technology, this performance doesn’t compromise other parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA), or...

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GaO beats SiC in channel mobility
Science

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

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Designing in MOSFETs for safe and reliable gate-drive operation
Basic Electronics

Designing in MOSFETs for safe and reliable gate-drive operation

The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source...

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