STMicroelectronics Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs

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STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs.

Features

  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (200°C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
  • Easy to drive

more information: https://www.st.com/content/st_com/en.html

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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