STMicroelectronics Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs


STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs.


  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (200°C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
  • Easy to drive

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