WeEn Semiconductors to Showcase Enhanced Thermal Performance Package Technology for SiC MOSFETs and Diodes at PCIM 2025
https://www.electronics-lab.com/ween-semiconductors-to-showcase-enhanced-thermal-performance-package-technology-for-sic-mosfets-and-diodes-at-pcim-2025/
TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI and extended reliability in automotive, renewable energy and high-power server applications WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, will showcase its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages at […]
SemiQ 1200 V SiC MOSFETs Six-Pack Modules with High Power Density and Low Switching Losses Enables Compact, Cost-Optimized Systems
https://www.electronics-lab.com/semiq-1200-v-sic-mosfets-six-pack-modules-with-high-power-density-and-low-switching-losses-enables-compact-cost-optimized-systems/
High-speed switching MOSFETs tested to over 1350 V with 100% WLBI, applications include EV charging, energy storage, UPS and motor drives SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These […]
STMicroelectronics unveils new generation of SiC power technology tailored for next-generation EV traction inverters
https://www.electronics-lab.com/stmicroelectronics-unveils-new-generation-of-sic-power-technology-tailored-for-next-generation-ev-traction-inverters/
Smaller, more efficient products to ramp-up in volumes through 2025 across 750V and 1200V classes, will bring the advantages of silicon carbide beyond premium models to mid-size and compact electric vehicles. ST plans to introduce multiple silicon carbide technology innovations through 2027, including a radical innovation. STMicroelectronics, is introducing its fourth generation STPOWER silicon carbide […]
onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET
https://www.electronics-lab.com/onsemi-nthl045n065sc1-silicon-carbide-sic-mosfet/
onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The NTHL045N065SC1 MOSFET features high efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system […]
GeneSiC Semiconductor 3300V SiC MOSFETs
https://www.electronics-lab.com/genesic-semiconductor-3300v-sic-mosfets/
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all […]
SiC power FETs boast super-low 6-mΩ RDS(on)
https://www.electronics-lab.com/sic-power-fets-boast-super-low-6-m%cf%89-rdson/
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter
https://www.electronics-lab.com/bm2sc12xfp2-lbz-quasi-resonant-ac-dc-converter/
ROHM’s BM2SC12xFP2-LBZ quasi-resonant AC/DC converter with built-in 1700 V SiC-MOSFET features a wide input voltage range. ROHM’s large current integrated FET type switching regulators are compatible with virtually all switching power supply applications. Features include a wide input voltage range, flexible operating frequency, and low power consumption. The broad lineup includes boost (step-up) regulators, buck (step-down) […]
Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series
https://www.electronics-lab.com/silicon-carbide-sic-ultra-fast-switching-mosfets-lsic1mo-series/
Littelfuse offers enhancement-mode N-channel SiC MOSFET, LSIC1MO series SiC MOSFETs from IXYS: A Littelfuse Technology offer an exceptional alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si […]
Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award
https://www.electronics-lab.com/littelfuse-ix4351ne-sic-mosfet-igbt-driver-wins-annual-power-product-award/
Littelfuse, Inc., a global manufacturer of leading technologies in circuit protection, power control, and sensing, announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years, these awards recognize and honor the best products throughout the world […]
STMicroelectronics Silicon Carbide Power MOSFETs
https://www.electronics-lab.com/stmicroelectronics-silicon-carbide-power-mosfets/
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. Features Slight variation of switching losses vs. temperature Very high operating temperature capability (200°C) Very fast and robust […]