GeneSiC Semiconductor 3300V SiC MOSFETs
Parts

GeneSiC Semiconductor 3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...

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SiC power FETs boast super-low 6-mΩ RDS(on)
Parts

SiC power FETs boast super-low 6-mΩ RDS(on)

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...

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BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter
IC

BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter

ROHM's BM2SC12xFP2-LBZ quasi-resonant AC/DC converter with built-in 1700 V SiC-MOSFET features a wide input voltage range. ROHM's large current integrated FET type switching regulators are compatible with virtually all switching power supply applications. Features include a wide...

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Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series
Parts

Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series

Littelfuse offers enhancement-mode N-channel SiC MOSFET, LSIC1MO series SiC MOSFETs from IXYS: A Littelfuse Technology offer an exceptional alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved...

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Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award
IC

Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award

Littelfuse, Inc., a global manufacturer of leading technologies in circuit protection, power control, and sensing, announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years,...

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STMicroelectronics Silicon Carbide Power MOSFETs
Parts

STMicroelectronics Silicon Carbide Power MOSFETs

STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. Features...

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High-Performance Silicon Carbide (SiC) Schottky Diodes
Parts

High-Performance Silicon Carbide (SiC) Schottky Diodes

MCC’s SiC diodes are well-suited for inverters for solar and motion control, UPS, Telekom base stations, PFC, and lighting Micro Commercial Components’ high-performance SiC Schottky diodes provide a high-efficiency, high-temperature performance of up to +175°C. These diodes,...

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CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility
High Voltage

CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility

CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET...

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