Renesas Debuts Dual-Side-Cooled 650V GaN FET for 800V Data Centers

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https://www.electronics-lab.com/renesas-debuts-dual-side-cooled-650v-gan-fet-for-800v-data-centers/

Housed in a compact 8x8 mm package that sheds heat from both sides, the 20 mω device targets the power-dense conversion stages of 800V AI rack architectures.

Nexperia Releases New GaN FET Devices

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https://www.electronics-lab.com/nexperia-releases-new-gan-fet-devices/

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. The cascode within the devices allows for higher levels of switching FOMs and on-state performance. Features of […]