Book Release: GaN Power Devices and Applications
https://www.electronics-lab.com/book-release-gan-power-devices-and-applications/
The book “GaN power devices and applications” is a guide for designers dealing with GaN devices written by Alex Lidow, founder and CEO of EPC. This company manufactures GaN power transistors. The book was written with input from about 30 experts in power conversion applications. Silicon power MOSFETs have not kept pace with evolutionary changes […]
PMP22650 – GaN-based, 6.6-kW, bidirectional, onboard charger reference design
https://www.electronics-lab.com/pmp22650-gan-based-6-6-kw-bidirectional-onboard-charger-reference-design/
The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required regulation range. The design uses a single processing core inside a TMS320F28388D microcontroller to […]
Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) RF GaN Switch
https://www.electronics-lab.com/qorvo-qpc1006-single-pole-triple-throw-sp3t-rf-switch/
Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) Switch is fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8GHz, the QPC1006 typically supports 50W input power handling at control voltages of 0/−40V for CW and pulsed RF operations. This switch maintains a low insertion loss of less than 1.0dB and greater than […]
EPC2216 – 15 V GaN Power Transistor
https://www.electronics-lab.com/epc2216-15-v-gan-power-transistor/
The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single Gate Threshold Voltage: 0.7 to 2.5 V Drain Source Voltage: 15 V […]
STDRIVEG600 Gate Driver for GaN Transistors
https://www.electronics-lab.com/stdriveg600-gate-driver-for-gan-transistors/
STMicroelectronics’ single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs STMicroelectronics’ STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up […]
TA9410E RF GaN Transistor is ideal for radio applications
https://www.electronics-lab.com/ta9410e-rf-gan-transistor-is-ideal-for-radio-applications/
Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore’s TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest. This transistor can be considered as a final stage PA […]
GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board
https://www.electronics-lab.com/gan-is-as-easy-to-use-as-silicon-epc-introduces-a-48-v-to-12-v-demo-board/
EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from […]
AspenCore Book Highlights GaN’s role for the New Power Electronics World
https://www.electronics-lab.com/aspencore-book-highlights-gans-role-for-the-new-power-electronics-world/
Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design advantages that are allowing previously unimaginable application performance: low leakage current, significantly reduced power losses, higher power density, higher-frequency operation, and […]
MPS taps EPC for 48V GaN DC-DC converter
https://www.electronics-lab.com/mps-taps-epc-for-48v-gan-dc-dc-converter/
The combination of MPS (Monolithic Power Systems) controllers with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 1700 W/in3 in high efficiency, low cost LLC DC-DC Conversion Monolithic Power Systems, Inc. (MPS), a leading company in high-performance power solutions, announced the launch of a new family of 48 V – […]
EPC2218 Enhancement-Mode GaN Power Transistors
https://www.electronics-lab.com/epc2218-enhancement-mode-gan-power-transistors/
EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT […]