STDRIVEG600 Gate Driver for GaN Transistors

STMicroelectronics’ single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs

STMicroelectronics’ STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can drive high-speed silicon and GaN FETs thanks to the high current capability, short propagation delay of 45 ns in typical conditions, and operation with a supply voltage down to 5 V. The dV/dt immunity is high: ±200 V/ns. The STDRIVEG600 is a robust driver featuring overtemperature protection and UVLO function on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions.

The interlocking function avoids cross-conduction conditions. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with microcontroller and DSP. A dedicated pin for shut down functionality is also available. The package is SO16. STDRIVEG600 is offered both in package part (PN is STDRIVEG600) and in wafer for dice business (PN is STDRIVEG600w).

Application Diagram

Features

• Voltage rail to 600 V
• Up to 20 V gate driver
• 5.5 A / 6 A sink/source currents
• 45 ns short propagation delay
• Bootstrap diode
• Separated ON-OFF outputs for easy gate driving tuning
• 3.3 V / 5 V logic inputs
• UVLO on V_CC and VBOOT
• Thermal shutdown
• Interlocking function
• Shutdown pin
• SO16 package

more information: https://www.st.com/en/power-management/stdriveg600.html

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