EPC2216 – 15 V GaN Power Transistor
The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single Gate Threshold Voltage: 0.7 to 2.5 V Drain Source Voltage: 15 V Drain Source Resistance: 20 to 26 milli-ohm Continuous Drain Current: 3.4 A Pulsed Drain Current: 28 A Total Charge: 0.87 to 1.1 nC Input Capacitance: 98 to 118 pF Output Capacitance: 66 to 99 pF Temperature operating range: -40 to +150 °C Qualification: AEC-Q101 RoHS Compliant: Yes Package-Type: Die Package: BGA Applications: High-Speed DC-DC conversion, Lidar/Pulsed Power Applications, Lidar for Augmented Reality Applications Dimensions: 0.85 x 1.2 mm more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2216.aspx
The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A.
Specifications
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Configuration: Single
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Gate Threshold Voltage: 0.7 to 2.5 V
- Drain Source Voltage: 15 V
- Drain Source Resistance: 20 to 26 milli-ohm
- Continuous Drain Current: 3.4 A
- Pulsed Drain Current: 28 A
- Total Charge: 0.87 to 1.1 nC
- Input Capacitance: 98 to 118 pF
- Output Capacitance: 66 to 99 pF
- Temperature operating range: -40 to +150 °C
- Qualification: AEC-Q101
- RoHS Compliant: Yes
- Package-Type: Die
- Package: BGA
- Applications: High-Speed DC-DC conversion, Lidar/Pulsed Power Applications, Lidar for Augmented Reality Applications
- Dimensions: 0.85 x 1.2 mm
more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2216.aspx
