EPC2216 – 15 V GaN Power Transistor

EPC2216 – 15 V GaN Power Transistor

The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A.


  • Configuration: Single
  • Gate Threshold Voltage: 0.7 to 2.5 V
  • Drain Source Voltage: 15 V
  • Drain Source Resistance: 20 to 26 milli-ohm
  • Continuous Drain Current: 3.4 A
  • Pulsed Drain Current: 28 A
  • Total Charge: 0.87 to 1.1 nC
  • Input Capacitance: 98 to 118 pF
  • Output Capacitance: 66 to 99 pF
  • Temperature operating range: -40 to +150 °C
  • Qualification: AEC-Q101
  • RoHS Compliant: Yes
  • Package-Type: Die
  • Package: BGA
  • Applications: High-Speed DC-DC conversion, Lidar/Pulsed Power Applications, Lidar for Augmented Reality Applications
  • Dimensions: 0.85 x 1.2 mm

more information: https://epc-co.com/epc/Products/eGaNFETsandICs/EPC2216.aspx

Please follow and like us:
Pin Share
About mixos

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

view all posts by admin
Notify of

Inline Feedbacks
View all comments
Get new posts by email:
Get new posts by email:

Join 97,426 other subscribers