Memory upgrade for ESP8266
https://www.electronics-lab.com/memory-add-esp8266/
Pete show us how to upgrade your ESP8266 with 32Mbit memory chip. Some time ago I passed comment in here about converting an ESP-01 to 32Mb (or 4MB). And here it is in the flesh – a 32Mb ESP-01 – and also – at last – Sonoff Upgrades. Now, why would you want to do […]
IBM scientists achieve storage memory breakthrough
https://www.electronics-lab.com/ibm-scientists-achieve-storage-memory-breakthrough/
For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last several years PCM has attracted the industry’s […]
Current bending yields low-power magnetic memory
https://www.electronics-lab.com/current-bending-yields-low-power-magnetic-memory/
by Harry Baggen @ elektormagazine.com: Magnetic random-access memory (MRAM) is faster, more efficient and more robust than other data storage media. MRAM stores data by making clever use of electron spin – a sort of gyroscopic property of electrons. Because it used magnetism instead of stored charge, MRAM is nonvolatile, which means that the stored data […]
Testing DRAM Using an Arduino
https://www.electronics-lab.com/testing-dram-using-an-arduino/
Chris @ insentricity.com wanted to test a few dozen individual RAM chips so he decided to use Arduino to make his life a little bit easier. In the article he explains the interface with Arduino and gives the code on github. My first thought was to test the chips in the TL866CS, but it doesn’t support […]
Samsung launches industry’s first 12Gb LPDDR4 DRAM
https://www.electronics-lab.com/samsung-launches-industrys-first-12gb-lpddr4-dram/
by Samsung: Samsung Electronics announced that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology. The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and […]
Mini Project: Doorbell Memory
https://www.electronics-lab.com/mini-project-doorbell-memory/
by Jan Buiting @ elektormagazine.com: Even in the Internet & Wi-Fi age where it seems irrelevant just where you are at a specific time, it’s sometime useful to know if a visitor called at your door while you were out. Who knows, it might be the DHL man with a delivery of essential components! The little […]
Toshiba launches 256-Gbit 48-layer 3-D NAND flash
https://www.electronics-lab.com/toshiba-launches-256-gbit-48-layer-3-d-nand-flash/
by Susan Nordyk @ edn.com: Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process, BiCS flash surpasses the capacity of conventional 2-D NAND flash memory, where cells are arrayed […]
EEPROM Module
https://www.electronics-lab.com/eeprom-module/
EEPROM Add-On Board offers an easy way to interface a standard 24Cxx type I2C EEPROM to your project. Specifications 5 VDC supply sourced through the interfacing Box Header connector Jumper selectable address option available Four mounting holes 3.2 mm each PCB dimensions 36 mm x 32 mm EEPROM Module – [Link]