SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip
https://www.electronics-lab.com/sst26wf064c-low-voltage-64-megabit-superflash-memory-device-microchip/
Microchip introduced a new 64Mbit Serial Quad I/O™ memory device—SST26WF064C with proprietary SuperFlash® technology. The SST26WF064C writes with a single power supply of 1.65-1.95V and significantly lower power consumption. This makes it ideal for wireless, mobile, and battery-powered applications. This 64Mbit memory device also features DTR or Dual Transfer Rate technology. DTR lets the user access data of the chip […]
96-Layer Memory Chips By Toshiba
https://www.electronics-lab.com/96-layer-memory-chips-by-toshiba/
The need for larger memory storage for smartphones will never stop, especially with the continuous development of larger and stronger applications. This need is always pushing semiconductor manufacturers to keep trying to fit as much bits as possible in smaller volumes and with lower costs. To achieve this, memory chips are now growing in three […]
Are Today’s MCUs Overdesigned? A Research Team Has The Answer
https://www.electronics-lab.com/todays-mcus-overdesigned-research-team-answer/
MCUs are called microcontrollers because they embed a CPU, memory and I/O units in one package. Apparently, today’s MCUs are full of peripherals and in most cases they are not used in the application, and from an engineering point of view this is a waste of money and energy, but on the other hand, for […]
SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash
https://www.electronics-lab.com/sk-hynix-introduces-industrys-highest-72-layer-3d-nand-flash/
SK Hynix Incorporated introduced the world’s first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb 3D NAND chips since November 2016. Within 5 months the researchers in SK […]
64-layer flash IC enables 1-Tbyte chips
https://www.electronics-lab.com/64-layer-flash-ic-enables-1-tbyte-chips/
Susan Nordyk @ edn.com writes: Toshiba has added a 512-Gbit (64-Gbyte), 64-layer flash memory device that employs 3-bit-per-cell TLC (triple-level cell) technology to its BiCS Flash product line. This technology will allow the development of 1-terabyte memory chips for use in enterprise and consumer solid-state drives. 64-layer flash IC enables 1-Tbyte chips – [Link]
DS28EC20, A Serial 1-Wire 20Kb EEPROM
https://www.electronics-lab.com/ds28ec20-serial-1-wire-20kb-eeprom/
The American manufacturer of analog and mixed-signal integrated circuits, Maxim Integrated, has developed a new serial EEPROM memory that operates from single-contact 1-wire interface. The DS28EC20 is a 20480-bit, 1-Wire® EEPROM organized as 80 memory pages of 256 bits each. An additional page is set aside for control functions. Data is written to a 32-byte […]
The New Fujitsu ReRam
https://www.electronics-lab.com/new-fujitsu-reram/
Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. Fujitsu Semiconductor has just launched world’s largest density 4 Mbit ReRAM product for mass production: MB85AS4MT. Partnering with Panasonic Semiconductor Solutions, this […]
ESP8266 16MB Flash Handling
https://www.electronics-lab.com/esp8266-16mb-flash-handling/
Piers Finlayson shares his adventures in programming the ESP8266 to access 16MB flash: To put this in context, the original ESP8266 modules (such as the ESP-01) offered 512KB of flash, with the more recent ones (ESP-07) 1MB and then 4MB. The maximum addressable flash memory of the ESP8266 is 16MB according to the datasheet. (The […]
Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon
https://www.electronics-lab.com/samsung-toshiba-will-start-64-layer-3d-nand-production-soon/
Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement succeeds the 48-layer BiCS FLASH one. Western Digital, the well known industry-leading […]
Information storage at one atom per bit; a 1kB atomic memory
https://www.electronics-lab.com/information-storage-one-atom-per-bit-1kb-atomic-memory/
A team of scientists at the Kavli Institute of Nanoscience at Delft University has achieved what may represent a limit in information storage density by creating a memory in which a single bit is represented by a single atom. By Graham Prophet @ edn-europe.com: Specifically, the team created a 1 kByte memory array where each […]