High-Efficiency, 28V, 2A, 430kHz, Synchronous Step-Down DC-DC in SOT583
IC

High-Efficiency, 28V, 2A, 430kHz, Synchronous Step-Down DC-DC in SOT583

The MP2328 from Monolithic Power Systems is a fully-integrated high-frequency, step-down dc-dc converter with internal power MOSFETs and synchronous rectification. It offers a very compact solution to achieve a 2A continuous output current over a wide input range, with excellent load...

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CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility
High Voltage

CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility

CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET...

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CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
Parts

CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications

Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of...

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Nexperia Releases its 0.57 mili-Ohm Product in LFPAK56 Packaging
IC

Nexperia Releases its 0.57 mili-Ohm Product in LFPAK56 Packaging

Nexperia announced the release of its lowest-ever RDS(on) power MOSFET, the PSMNR51-25YLH, exhibits a value of 0.57mΩ at 25V. Based on NextPowerS3 technology, this performance doesn’t compromise other parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA), or...

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GaO beats SiC in channel mobility
Science

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

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Designing in MOSFETs for safe and reliable gate-drive operation
Basic Electronics

Designing in MOSFETs for safe and reliable gate-drive operation

The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source...

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18V, 2A, Single-Phase, BLDC Motor Driver with Integrated Hall Sensor
Motor

18V, 2A, Single-Phase, BLDC Motor Driver with Integrated Hall Sensor

The MP6650 is a single-phase, brushless, DC motor driver with integrated power MOSFETs and a Hall-effect sensor. The device drives single-phase brushless DC fan motors with up to 2A of output current. The IC has a 3.3V to 18V input voltage range and input line reverse-voltage protection...

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Isolated Gate MOSFET Driver Based DC Motor and Solenoid Driver Arduino Nano Shiled
Arduino

Isolated Gate MOSFET Driver Based DC Motor and Solenoid Driver Arduino Nano Shiled

This is an Isolated gate driver-based N channel Mosfet Arduino Nano shield based on Si8261ACC, which can be used in various applications like DC Motor driver, solenoid driver, led driver, bulb driver and heater driver, with 3A fast switching diode provided across the output for an...

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