GeneSiC Semiconductor 3300V SiC MOSFETs

GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all temperatures, allowing superior robustness and system reliability.

Features

• Softer R_DS(ON) v/s temperature dependency
• LoRing™ – electromagnetically optimized design
• Smaller R_G(INT) and lower Q_G
• Low device capacitances (C_OSS C_RSS)
• Industry-leading UIL and short-circuit robustness
• Robust body diode with low V_F and low Q_RR
• Normally off-stable temperature up to 175°C
• Optimized package with separate driver source pin

Applications

• Traction
• Solar string inverters
• EV- fast chargers
• Pulsed power
• Switched-mode power supply
• Energy storage
• Solid-state transformers
• Solid-state circuit breakers

more information: https://www.genesicsemi.com/sic-mosfet/G2R1000MT33J/G2R1000MT33J.pdf

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