Low on resistance, High speed switching Expanded Lineup of P-channel MOSFET
https://www.electronics-lab.com/low-resistance-high-speed-switching-expanded-lineup-p-channel-mosfet/
Torex Semiconductor Ltd. has launched the XP231P02013R and XP232P05013R as new series of MOSFET. XP231P02013R (-30V Withstand Voltage) and XP232P05013R (-30V Withstand Voltage) are general-purpose P-channel MOSFET with low on resistance and high speed switching. It can be used for various applications such as relay circuits and switching circuits. The gate protection diode is built-in […]
Fundamentals of MOSFET and IGBT Gate Driver Circuits
https://www.electronics-lab.com/fundamentals-mosfet-igbt-gate-driver-circuits/
The main purpose of this application report is to demonstrate a systematic approach to design high-performance gate drive circuits for high-speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. […]
High-Efficiency, 28V, 2A, 430kHz, Synchronous Step-Down DC-DC in SOT583
https://www.electronics-lab.com/high-efficiency-28v-2a-430khz-synchronous-step-dc-dc-sot583/
The MP2328 from Monolithic Power Systems is a fully-integrated high-frequency, step-down dc-dc converter with internal power MOSFETs and synchronous rectification. It offers a very compact solution to achieve a 2A continuous output current over a wide input range, with excellent load and line regulation. The MP2328 has synchronous-mode operation for high efficiency over wide output […]
CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility
https://www.electronics-lab.com/cissoid-announces-3-phase-sic-mosfet-intelligent-power-module-e-mobility/
CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers. Co-optimizing the electrical, mechanical and thermal design of the power […]
CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
https://www.electronics-lab.com/coolsic-mosfet-650-v-family-offers-best-reliability-performance-even-applications/
Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Amongst them are server, telecom and industrial SMPS, solar energy systems, energy storage […]
Nexperia Releases its 0.57 mili-Ohm Product in LFPAK56 Packaging
https://www.electronics-lab.com/nexperia-releases-0-57-m%cf%89-product-lfpak56-packaging/
Nexperia announced the release of its lowest-ever RDS(on) power MOSFET, the PSMNR51-25YLH, exhibits a value of 0.57mΩ at 25V. Based on NextPowerS3 technology, this performance doesn’t compromise other parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA), or gate charge QG. Features 100% avalanche tested at I(AS) = 190 A Optimized for low […]
GaO beats SiC in channel mobility
https://www.electronics-lab.com/gao-beats-sic-channel-mobility/
Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide (α-Ga2O3) as a power semiconductor. The company said it has achieved a channel mobility of 72cm2/Vs in […]
Designing in MOSFETs for safe and reliable gate-drive operation
https://www.electronics-lab.com/designing-mosfets-safe-reliable-gate-drive-operation/
The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source voltage is the maximum gate-source voltage that the MOSFET can withstand safely. VGS-max ratings vary […]
18V, 2A, Single-Phase, BLDC Motor Driver with Integrated Hall Sensor
https://www.electronics-lab.com/18v-2a-single-phase-bldc-motor-driver-integrated-hall-sensor/
The MP6650 is a single-phase, brushless, DC motor driver with integrated power MOSFETs and a Hall-effect sensor. The device drives single-phase brushless DC fan motors with up to 2A of output current. The IC has a 3.3V to 18V input voltage range and input line reverse-voltage protection (RVP) to save the external diode on the […]
Isolated Gate MOSFET Driver Based DC Motor and Solenoid Driver Arduino Nano Shiled
https://www.electronics-lab.com/isolated-gate-mosfet-driver-based-dc-motor-solenoid-driver-arduino-nano-shiled/
This is an Isolated gate driver-based N channel Mosfet Arduino Nano shield based on Si8261ACC, which can be used in various applications like DC Motor driver, solenoid driver, led driver, bulb driver and heater driver, with 3A fast switching diode provided across the output for an inductive load which protects the circuit from back EMF. […]