Nexperia Releases its 0.57 mili-Ohm Product in LFPAK56 Packaging
Nexperia announced the release of its lowest-ever RDS(on) power MOSFET, the PSMNR51-25YLH, exhibits a value of 0.57mΩ at 25V. Based on NextPowerS3 technology, this performance doesn’t compromise other parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA), or gate charge QG.
Nexperia announced the release of its lowest-ever RDS(on) power MOSFET, the PSMNR51-25YLH, exhibits a value of 0.57mΩ at 25V. Based on NextPowerS3 technology, this performance doesn’t compromise other parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA), or gate charge QG.
Features
- 100% avalanche tested at I(AS) = 190 A
- Optimized for low RDSon
- Low leakage < 1 μA at 25 °C
- Low spiking and ringing for low EMI designs
- Optimized for 4.5 V gate drive
- Copper-clip for low parasitic inductance and resistance
- High-reliability LFPAK package, qualified to 175 °C
- Wave solderable; exposed leads for optimal solder coverage and visual solder inspection
Nexperia’s PSMNR51-25YLH MOSFET offers a maximum drain current rating up to 380 Amps, especially important in motor control applications where motor-stall can result in very high current surges for short periods. The device is packaged in LFPAK56, Nexperia’s 5mm x 6mm Power-SO8 compatible package, with a copper-clip construction that absorbs thermal stresses.
The all-caps headline doesn’t work very good with this text. 0.57 megaohm sounds pretty bad for a MOSFET.. 😛
Yes, indeed, I fixed it a bit!