New flat transistor defies theoretical limit
https://www.electronics-lab.com/new-flat-transistor-defies-theoretical-limit/
by Bob Yirka @ techxplore.com: A team of researchers with members from the University of California and Rice University has found a way to get a flat transistor to defy theoretical limitations on Field Effect Transistors (FETs). In their paper published in the journal Nature, the team describes their work and why they believe it could […]
Basic Types of Transistors
https://www.electronics-lab.com/article-basic-transistor-types/
In this article we will review the basic transistor types and their function. We will cover bipolar transistor, Junction FET, MOSFET and UJT transistor types. Feel free to comment with other transistor types you know. Bipolar Transistor Bipolar transistors are three terminal devices and act like electrically controlled switches of as current/voltage amplifiers. They come […]
Build an op amp with three discrete transistors
https://www.electronics-lab.com/build-an-op-amp-with-three-discrete-transistors/
by Lyle Russell Williams: You can use three discrete transistors to build an operational amplifier with an open-loop gain greater than 1 million (Figure 1). You bias the output at approximately one-half the supply voltage using the combined voltage drops across zener diode D1, the emitter-base voltage of input transistor Q1, and the 1V drop across […]
650V, 100A GaN transistors on show
https://www.electronics-lab.com/650v-100a-gan-transistors-on-show/
by Graham Prophet @ edn-europe.com: GaN Systems (Ottawa, Canada) is to display its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 – ECCE Europe (CERN, Geneva, September 8th – 10th ) The GS66540C (the picture is of a prior, lower-current part) high […]
Terahertz Optical Transistors Beat Silicon
https://www.electronics-lab.com/terahertz-optical-transistors-beat-silicon/
by R. Colin Johnson @ eetimes.com: PORTLAND, Ore.–Purdue University researchers have demonstrated a CMOS-compatible all-optical transistor capable of 4THz speeds, potentially over a 1000 times faster than silicon transistors. Nano-photonic transistors processed at low-temperatures can be fabricated atop complementary metal oxide semiconductors (CMOS) to boost switching time by ~5,000-times less than 300 femtoseconds (fs) or almost […]
Making the new silicon: Gallium nitride electronics could drastically cut energy usage
https://www.electronics-lab.com/making-the-new-silicon-gallium-nitride-electronics-could-drastically-cut-energy-usage/
by Rob Matheson @ phys.org: An exotic material called gallium nitride (GaN) is poised to become the next semiconductor for power electronics, enabling much higher efficiency than silicon. In 2013, the Department of Energy (DOE) dedicated approximately half of a $140 million research institute for power electronics to GaN research, citing its potential to reduce worldwide […]
Simple circuit lets you characterize JFETs
https://www.electronics-lab.com/simple-circuit-lets-you-characterize-jfets/
by John Fattaruso @ edn.com: When working with discrete JFETs, designers may need to accommodate a large variation in device parameters for a given transistor type. A square-law equation is usually used as an approximate model for the drain-current characteristic of the JFET: ID=β(VGS−VP)2, where ID is the drain current, VGS is the gate-to-source voltage, β […]