SemiQ 1200 V SiC MOSFETs Six-Pack Modules with High Power Density and Low Switching Losses Enables Compact, Cost-Optimized Systems
https://www.electronics-lab.com/semiq-1200-v-sic-mosfets-six-pack-modules-with-high-power-density-and-low-switching-losses-enables-compact-cost-optimized-systems/
High-speed switching MOSFETs tested to over 1350 V with 100% WLBI, applications include EV charging, energy storage, UPS and motor drives SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced a series of highly efficient 1200 V SiC MOSFET Six-Pack Modules. These […]
GaN Systems GS-065-060-3 650V Enhancement Mode GaN Transistor
https://www.electronics-lab.com/gan-systems-gs-065-060-3-650v-enhancement-mode-gan-transistor/
GaN Systems GS-065-060-3 650V Enhancement Mode GaN (Gallium Nitride) Transistor is a power transistor optimized for high current, high voltage breakdown, and high switching frequency. The GS-065-060-3 features an Island Technology® cell layout, reducing the size of the device while transferring substantially more current using on-chip metal. GaNPX® packaging enables low inductance and low thermal resistance […]
Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor
https://www.electronics-lab.com/nexperia-pbss4310pas-q-npn-low-vcesat-transistor/
Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). The leadless small SMD plastic package […]
UnitedSiC UF3N170400B7S 1700V-400mW SiC Normally-on JFET
https://www.electronics-lab.com/unitedsic-uf3n170400b7s-1700v-400mw-sic-normally-on-jfet/
UnitedSiC UF3N170400B7S 1700V-400mW SiC Normally-on JFET exhibits ultra-low on-resistance (RDS(ON)) and gate charge (QG) that allows low conduction and switching loss. The low RDS(ON) value of this JFET at VGS = 0V is ideal for current protection circuits without the need for active control and for cascode operation. The UF3N170400B7S 1700V-400mW SiC Normally-on JFET offers a […]
SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
https://www.electronics-lab.com/sgt120r65al-650-v-75-mohm-typ-15-a-e-mode-powergan-transistor/
The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances. Enhancement mode normally off transistor Very high switching speed High power […]
Book Release: GaN Power Devices and Applications
https://www.electronics-lab.com/book-release-gan-power-devices-and-applications/
The book “GaN power devices and applications” is a guide for designers dealing with GaN devices written by Alex Lidow, founder and CEO of EPC. This company manufactures GaN power transistors. The book was written with input from about 30 experts in power conversion applications. Silicon power MOSFETs have not kept pace with evolutionary changes […]
Toshiba 2SA/2SC Bipolar Transistors
https://www.electronics-lab.com/toshiba-2sa-2sc-bipolar-transistors/
Toshiba 2SA/2SC Bipolar Transistors are AEC-Q101 qualified and designed for low-frequency, AM, and audio frequency general purpose amplifier applications. The 2SA/2SC Transistors feature high voltage, high collector current, high hFE, and excellent hFE linearity. The Toshiba 2SA/2SC Bipolar Transistors are available in a small SSM, USM, or S-Mini package. Features AEC-Q101 qualified High voltage High […]
GeneSiC Semiconductor 3300V SiC MOSFETs
https://www.electronics-lab.com/genesic-semiconductor-3300v-sic-mosfets/
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal runaway. The 3300V SiC MOSFETs deliver low conduction losses at all […]
EPC2216 – 15 V GaN Power Transistor
https://www.electronics-lab.com/epc2216-15-v-gan-power-transistor/
The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single Gate Threshold Voltage: 0.7 to 2.5 V Drain Source Voltage: 15 V […]
Rodriguez – The World’s Slowest IV Tracer
https://www.electronics-lab.com/rodriguez-the-worlds-slowest-iv-tracer/
Joseph Eoff has posted on Hackaday details about Rodriguez, which is an IV tracer. About the origin of the project, he says: “Rodriguez started as a nameless project I used to make a point in an online discussion about the shape of the current/voltage plot of the base/emitter junction of an NPN transistor. It’s as […]