650V, 100A GaN transistors on show

650V, 100A GaN transistors on show


by Graham Prophet @ edn-europe.com:

GaN Systems (Ottawa, Canada) is to display its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 – ECCE Europe (CERN, Geneva, September 8th – 10th )

The GS66540C (the picture is of a prior, lower-current part) high current power devices will be revealed for the first time. Part of the company’s family of 650V gallium nitride power transistors based on its proprietary Island Technology, these high density devices achieve extremely efficient power conversion with fast switching rates of >100V/nsec and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets. The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Parts are, the company says, being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage.

650V, 100A GaN transistors on show – [Link]

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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