GaN FETs step up performance, cut package footprint

GaN FETs step up performance, cut package footprint

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by Graham Prophet @ edn-europe.com:

Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher performance.

GaN FETs step up performance, cut package footprint – [Link]

About mixos

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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