GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
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GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and...

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Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
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Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die

Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital...

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EPC2067 40 V, 409 A(pulsed) eGaN FET
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EPC2067 40 V, 409 A(pulsed) eGaN FET

EPC's EPC2067 is a 40 V eGaN FET for state-of-the-art power density The EPC2067 from EPC is a 40 V, 1.3 mΩ (typical) eGaN FET with a pulsed current rating of 409 A in a tiny 9.3 mm2 footprint. This device is ideal for applications with demanding high power density performance...

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SiC power FETs boast super-low 6-mΩ RDS(on)
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SiC power FETs boast super-low 6-mΩ RDS(on)

At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...

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STDRIVEG600 Gate Driver for GaN Transistors
IC

STDRIVEG600 Gate Driver for GaN Transistors

STMicroelectronics' single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is...

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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board
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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board

EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation...

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EPC2218 Enhancement-Mode GaN Power Transistors
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EPC2218 Enhancement-Mode GaN Power Transistors

EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...

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Nexperia Releases New GaN FET Devices
Parts

Nexperia Releases New GaN FET Devices

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company's proprietary CCPAK surface mount packaging. The cascode within the devices allows...

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