Nexperia Releases New GaN FET Devices
Parts

Nexperia Releases New GaN FET Devices

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company's proprietary CCPAK surface mount packaging. The cascode within the devices allows...

Continue Reading
1271
Views
0 Comments
Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs
Parts

Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design...

Continue Reading
934
Views
0 Comments
Dual-Channel Gate Driver for Enhancement Mode GaN Transistors
IC

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

The uP1966A from uPI Semiconductor is designed to drive both high-side and low-side GaN FETs in half-bridge topologies. It integrates an internal bootstrap supply and UVLO. The uP1966A has split gate outputs that can operate to several MHz on both high and low side drive channels,...

Continue Reading
1224
Views
0 Comments
Researches Solve Problems of Organic Thin Film Transistors By Developing Nanostructured Gate Dielectric
Science

Researches Solve Problems of Organic Thin Film Transistors By Developing Nanostructured Gate Dielectric

Amorphous silicon-based Thin-film transistors (TFTs) are the foundation of many modern-day technologies, such as smartphones and flat-panel TVs. Still, it comes with a few drawbacks like performance limitations due to limited carrier mobility. Provoking the researchers in search of...

Continue Reading
2820
Views
0 Comments
Researchers Demonstrate New More Efficient FET By Implementing Negative Capacitance
ScienceTechnology

Researchers Demonstrate New More Efficient FET By Implementing Negative Capacitance

A group of Researchers from Purdue University in Lafayette, Indiana demonstrated the effect called negative capacitance by making a new type of more energy efficient transistor. This new kind of Field Effect Transistor (FET) proves a theory introduced in 2008 by Supriyo Datta, the...

Continue Reading
2948
Views
0 Comments
GaN FETs step up performance, cut package footprint
Parts

GaN FETs step up performance, cut package footprint

by Graham Prophet @ edn-europe.com: Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher...

Continue Reading
3221
Views
0 Comments
Wafer-scale-packaged integrated FET switches handle 1 – 4A
IC

Wafer-scale-packaged integrated FET switches handle 1 – 4A

by Graham Prophet @ edn-europe.com: Silego Technology has developed a series of integrated power switches for use in mobile and battery powered products, to carry out power gating of functional blocks within a design; the devices come in sub-mm-size chip scale packages, handle...

Continue Reading
2771
Views
0 Comments
New flat transistor defies theoretical limit
Science

New flat transistor defies theoretical limit

by Bob Yirka @ techxplore.com: A team of researchers with members from the University of California and Rice University has found a way to get a flat transistor to defy theoretical limitations on Field Effect Transistors (FETs). In their paper published in the journal Nature, the...

Continue Reading
3554
Views
0 Comments
Archives