GigaDevice Releases High-Speed Dual-Voltage SPI NOR Flash for 1.2 V SoCs
The new GD25NX series xSPI NOR Flash features a dual-voltage design with 1.2 V I/O to enable direct connection to 1.2 V SoCs and reduce read power.
GigaDevice has released its new line of dual-voltage xSPI NOR Flash products, designated the GD25NX series. This series features an innovative design optimized for integration with next-generation system-on-chips (SoCs).
The series features a dual-voltage design incorporating a 1.8 V core with a 1.2 V I/O interface. This 1.2 V I/O allows the flash memory to connect directly to 1.2 V SoCs, eliminating the requirement for an external booster circuit. This direct-connect capability results in a reduction in overall system power consumption and lowers the bill of materials cost.
The new GD25NX series is part of GigaDevice’s larger SPI NOR Flash product family. Image used courtesy of GigaDevice
Performance Metrics for Data Transfer
The GD25NX series utilizes an octal SPI interface and is compliant with the xSPI standard. This interface supports a maximum clock frequency of 200 MHz in both single transfer rate (STR) and double transfer rate (DTR) modes. At this frequency, the device delivers a peak data throughput of 400 MB/s.
Beyond high-speed reading, the device exhibits improved program and erase efficiencies. The typical page program time is specified at 0.12 ms, which, according to GigaDevice, represents a 30% increase in overall programming speed when compared to conventional 1.8 V octal Flash products. The sector erase time is 27 ms, offering a 10% reduction in erase time against the same conventional devices.
Power Efficiency and Data Integrity
The 1.2 V I/O architecture is specifically engineered for power-sensitive applications. The design achieves read currents as low as 16 mA in Octal I/O STR mode at a 200 MHz clock frequency. Compared with traditional 1.8 V Octal I/O SPI NOR Flash devices at similar performance levels, the 1.2 V I/O approach reduces read power consumption by up to 50%. This power efficiency is particularly relevant for battery-operated and embedded systems.
The GD25NX series brings high-speed operation and low-power consumption to 1.2 V SoC applications. Image used courtesy of GigaDevice
Additionally, the device’s integrated features reinforce data integrity and reliability.. The GD25NX series utilizes error correction code algorithms and cyclic redundancy check verification to protect stored data and extend product lifespan. To ensure signal stability during high-speed operation, especially at 200 MHz, the series also incorporates a data strobe functionality. The series is available in 64 Mb and 128 Mb densities and is offered in TFBGA24 and WLCSP packaging options.
High-Speed Operation, Low-Power Consumption
With its new GD25NX series, GigaDevice aims to provide a high-performance memory solution by combining the speed of xSPI NOR Flash with a power-optimized 1.2 V I/O architecture. This approach delivers 400 MB/s throughput while simplifying system design and reducing energy demand, positioning the device for demanding embedded applications. Applications for the GD25NX series include high-stability, high-speed systems in wearables, data centers, edge AI, and complex automotive electronics.
