Energy-efficient power electronics – gallium oxide power transistors with record values
https://www.electronics-lab.com/energy-efficient-power-electronics-gallium-oxide-power-transistors-record-values/
The Ferdinand Braun Institute for Highest Frequency Technology (FBH) in Berlin has achieved a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3 gallium oxide MOSFETs developed by FBH scientists provide a high breakdown voltage with high current conductivity. With a breakdown voltage of 1.8KV and a record power density of 155 megawatts per […]
ON Semiconductor NCP51820 half-bridge gate driver
https://www.electronics-lab.com/semiconductor-ncp51820-half-bridge-gate-driver/
The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode. The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode (e-mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. Both drive stages employ a voltage regulator to […]
Infineon Gallium Nitride Power Devices
https://www.electronics-lab.com/infineon-adds-gan-gallium-nitride-power-portfolio/
Infineon adds GaN (Gallium Nitride) to its power portfolio: CoolGaN™ and GaN EiceDRIVER™ ICs. The next essential step towards an energy-efficient world lies in the use of new materials and technologies. Wide bandgap semiconductors enable greater power efficiency, smaller size, lighter weight, lower cost, or all together. Infineon is uniquely positioned in the power semiconductor […]
1kW bidirectional DC-DC converter with credit card footprint
https://www.electronics-lab.com/1kw-bidirectional-dc-dc-converter-credit-card-footprint/
Diamond Electric in Japan has designed a 1kW isolated bidirectional DC-DC converter (IBDC) inverter using gallium nitride (GaN) devices that is the size of a credit card. by Nick Flaherty @ eenewseurope.com: The technology can substantially reduce the weight and size of DC-DC converters for rechargeable batteries in electric vehicles (EVs) and smart grids as well […]
GaN FETs step up performance, cut package footprint
https://www.electronics-lab.com/gan-fets-step-performance-cut-package-footprint/
by Graham Prophet @ edn-europe.com: Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher performance. GaN FETs step up performance, cut package footprint – [Link]
650V, 100A GaN transistors on show
https://www.electronics-lab.com/650v-100a-gan-transistors-on-show/
by Graham Prophet @ edn-europe.com: GaN Systems (Ottawa, Canada) is to display its GS66540C 650V 100A high current GaN power transistors for the first time at the 17th Conference on Power Electronics and Applications, EPE’15 – ECCE Europe (CERN, Geneva, September 8th – 10th ) The GS66540C (the picture is of a prior, lower-current part) high […]
SiC/GaN Poised for Power
https://www.electronics-lab.com/sicgan-poised-for-power/
by R. Colin Johnson @ eetimes.com: PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report. One of the big drivers behind the shift is the […]
Making the new silicon: Gallium nitride electronics could drastically cut energy usage
https://www.electronics-lab.com/making-the-new-silicon-gallium-nitride-electronics-could-drastically-cut-energy-usage/
by Rob Matheson @ phys.org: An exotic material called gallium nitride (GaN) is poised to become the next semiconductor for power electronics, enabling much higher efficiency than silicon. In 2013, the Department of Energy (DOE) dedicated approximately half of a $140 million research institute for power electronics to GaN research, citing its potential to reduce worldwide […]