ON Semiconductor NCP51820 half-bridge gate driver

The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode. The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode (e-mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies.

Digital ICs High Voltage Power August 5, 2019 by mixos

The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode.

The NCP51820, a high-speed gate driver, is designed to meet the requirements of driving enhancement mode (e-mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies.

Both drive stages employ a voltage regulator to maintain the gate-source drive signal and to fully protect the gate of the GaN power transistor. The gate driver offers short and matched propagation delays as well as -3.5 V to +650 V (typical) common-mode voltage range for the high-side drive. It offers protection functions based on voltage monitoring and thermal shutdown.

Key features

650 V, High-Side and Low-Side Gate Driver
Fast and Matched Propagation Delay
Regulated Gate Driver with Independent Output Stages
QFN 4 x 4 mm Optimized Pinout Package

Additional features

Propagation Delay of 50 ns MAX
Matched Propagation Delay of 5 ns MAX
Level Shift Technology Providing -3.5 V to +650 V (Typ.) Common-Mode Voltage Range for the High-Side Drive and -3.5 V to +3.5 V Common-Mode Voltage Range for the Low-Side Drive
200 V/ns (dV/dt) Rating for all SW and PGND Referenced Circuitry
Separate Source and Sink Output Pin
Regulated 5.2 V Gate Driver with Independent UVLO for High-Side and Low-Side Output Stages
QFN 4 x 4 mm Packaging with Optimized Pinout

Applications