onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET

onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET


onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The NTHL045N065SC1 MOSFET features high efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size. Typical applications include Switching Mode Power Supplies (SMPS), solar inverters, DC-DC converters, UPS, and energy storage.


  • High speed switching with low capacitance (Coss=162pF)
  • Typical RDS(on)=32m @ VGS=18V
  • Typical RDS(on)=42m @ VGS=15V
  • 650V Drain-to-Source Voltage (VDSS)
  • 66A Continuous Drain Current (ID max)
  • Ultra low gate charge (QG(tot)=105nC)
  • 100% avalanche tested
  • High junction temperature (TJ < 175°C)
  • Pb-free and RoHS compliant

more information: https://www.onsemi.com/products/discrete-power-modules/silicon-carbide-sic/silicon-carbide-sic-mosfets/nthl045n065sc1

About mixos

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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