Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series

Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series

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Littelfuse offers enhancement-mode N-channel SiC MOSFET, LSIC1MO series

SiC MOSFETs from IXYS: A Littelfuse Technology offer an exceptional alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in blocking voltage, specific on-resistance, and junction capacitances. The robust design of these SiC MOSFETs accommodate a wider range of high-temperature applications. Higher switching frequencies enable smaller passive filter components; lower device losses enable smaller heat sinks. Combined, these features enable improved system efficiency and power density. The devices have smaller die sizes per voltage/current rating making them ideal for motor drive control, power conversion systems, solar inverters, and other applications.

Resources

Features

  • High-temperature operation
  • High blocking voltages and low specific on-resistance (SiC material properties)
  • Ultra-fast switching speeds
  • Lower switching losses

Applications

  • Power conversion systems
  • Solar inverters
  • Switch-mode power supplies
  • UPS systems
  • Motor drives
  • High voltage DC/DC converters
  • Battery chargers

more information: https://www.littelfuse.com/products/power-semiconductors/silicon-carbide.aspx

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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