TA9410E RF GaN Transistor is ideal for radio applications
https://www.electronics-lab.com/ta9410e-rf-gan-transistor-is-ideal-for-radio-applications/
Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore’s TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest. This transistor can be considered as a final stage PA […]
3D printed liquid cooled heatsinks cool down TO-247 transistors
https://www.electronics-lab.com/3d-printed-liquid-cooled-heatsinks-cool-down-to-247-transistors/
Standard Transistor Cooler Made by 3D-printing using SLM (Selective Laser Melting) A very effective way to dissipate the high heat flux densities of electronic power modules or power devices with high power density is the use of micro-coolers or micro-channel heat sinks made by SML. These active small cooling elements can transmit up to 1000 […]
AspenCore Book Highlights GaN’s role for the New Power Electronics World
https://www.electronics-lab.com/aspencore-book-highlights-gans-role-for-the-new-power-electronics-world/
Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design advantages that are allowing previously unimaginable application performance: low leakage current, significantly reduced power losses, higher power density, higher-frequency operation, and […]
EPC2218 Enhancement-Mode GaN Power Transistors
https://www.electronics-lab.com/epc2218-enhancement-mode-gan-power-transistors/
EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT […]
First Bizen quantum tunnelling transistors launched
https://www.electronics-lab.com/first-bizen-quantum-tunnelling-transistors-launched/
A UK startup is to ship its first 1200V power devices using a new silicon architecture called Bizen that fits into TO247 or TO263 packages. by Nick Flaherty @ eenewseurope.com The first devices to use the Bizen process technology include three parts rated at 1200V/75A, 900V/75A and 650V/32A, available in the industry-standard TO247 or TO263 […]
Single-atom transistor ‘recipe’ simplifies atomic-scale fabrication
https://www.electronics-lab.com/single-atom-transistor-recipe-simplifies-atomic-scale-fabrication/
Researchers at the National Institute of Standards and Technology (NIST) and the University of Maryland say they have developed a step-by-step recipe to produce single-atom transistors. by Rich Pell @ smart2zero.com Transistors consisting of only several-atom clusters or even single atoms, say the researchers, promise to become the building blocks of a new generation of […]
CoolSiC™ MOSFET 650 V family offers best reliability and performance to even more applications
https://www.electronics-lab.com/coolsic-mosfet-650-v-family-offers-best-reliability-performance-even-applications/
Infineon Technologies AG continues to expand its comprehensive silicon carbide (SiC) product portfolio with 650 V devices. With the newly launched CoolSiC™ MOSFETs Infineon is addressing the growing demand for energy efficiency, power density, and robustness in a wide range of applications. Amongst them are server, telecom and industrial SMPS, solar energy systems, energy storage […]
GaO beats SiC in channel mobility
https://www.electronics-lab.com/gao-beats-sic-channel-mobility/
Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide (α-Ga2O3) as a power semiconductor. The company said it has achieved a channel mobility of 72cm2/Vs in […]
Designing in MOSFETs for safe and reliable gate-drive operation
https://www.electronics-lab.com/designing-mosfets-safe-reliable-gate-drive-operation/
The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source voltage is the maximum gate-source voltage that the MOSFET can withstand safely. VGS-max ratings vary […]
7mΩ SiC FETs deliver better performance, improved efficiency and lower losses
https://www.electronics-lab.com/7m%cf%89-sic-fets-deliver-better-performance-improved-efficiency-lower-losses/
With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers . Based on a unique cascode configuration, the UF3C/UF3SC series provides higher switching speeds, higher efficiency, and lower […]