Nexperia Silicon Germanium (SiGe) rectifiers offer Cutting-edge high efficiency

Nexperia Silicon Germanium (SiGe) rectifiers offer Cutting-edge high efficiency


Nexperia’s SiGe rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. Targeting automotive, server markets, and communications infrastructure, the AEC-Q101 compliant rectifiers are of particular benefit in high-temperature applications. These extremely low leakage devices allow an extended safe-operating area with no thermal runaway up to 175 °C. And, at the same time, offer significant room to optimize your design towards higher efficiency.

Nexperia has developed this new rectifier technology based on silicon-germanium (SiGe) for applications in the 100-200V range. Furthermore, they have been developing SiGe rectifier technology in recent years, and already have several patents for the process which address the apparently conflicting demands for high efficiency and high-temperature operation.

Key features

  • VR of 120 V, 150 V, 200 V
  • IR of 1, 2, 3 A
  • Low forward voltage and low Qrr
  • Extremely low leakage current of < 1nA
  • Thermal stability up to 175 °C Tj
  • Fast and smooth switching
  • Low parasitic capacitance
  • AEC-Q101 qualified
  • Space-saving, rugged CFP packaging

more information:

About mixos

Mike is the founder and editor of, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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