Nexperia Rolls Out AEC-Q100 Qualified Multiplexer for Automotive Applications
https://www.electronics-lab.com/nexperia-rolls-out-aec-q100-qualified-multiplexer-for-automotive-applications/
The NMUX27518-Q100 is a 2-to-1 multiplexer designed for automotive applications, featuring a wide 1.08 V to 3.6 V voltage range and a high 500 MHz bandwidth.
Nexperia NCA95xx I2C GPIO Expanders
https://www.electronics-lab.com/nexperia-nca95xx-i2c-gpio-expanders/
Nexperia NCA95xx I2C General-Purpose I/O (GPIO) Expanders provide an elegant solution when additional I/Os are needed while keeping the interconnections to a minimum. Housed in TSSOP24 and HWQFN24, these GPIO expanders are equipped with multiple features Interrupt, Hardware RESET, Internal pull-up resistors, and configurable pull-ups. These Nexperia NCA95xx GPIO expanders feature benefits such as extremely […]
Energy harvesting PMIC from Nexperia includes MPPT tracking
https://www.electronics-lab.com/energy-harvesting-pmic-from-nexperia-includes-mppt-tracking/
Nexperia, the expert in essential semiconductors, today announced an expansion to its range of Power ICs with Energy Harvesting solutions to simplify and enhance the performance of low-power internet of things (IoT) and other embedded applications. The NEH2000BY is a high-performance power management integrated circuit (PMIC) which recharges a battery or storage capacitor using energy […]
Nexperia NXT4557 SIM Card Interface Level Translator with ENABLE pin
https://www.electronics-lab.com/nexperia-nxt4557-sim-card-interface-level-translator-with-enable-pin/
Nexperia NXT4557 SIM Card Interface Level Translator is built for interfacing a SIM card with a single low-voltage host-side interface. The NXT4557 consists of three-level translators to convert the data, RST, and CLK signals between a SIM card and a host microcontroller. The translator features a high-speed level translation capable of supporting class-B, class-C SIM […]
Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor
https://www.electronics-lab.com/nexperia-pbss4310pas-q-npn-low-vcesat-transistor/
Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). The leadless small SMD plastic package […]
Nexperia ASFET for 36 V DC motors
https://www.electronics-lab.com/nexperia-asfet-for-36-v-dc-motors/
There is growing demand for 36 V DC motors, often being used with multi-cell lithium-ion battery packs, in an increasing range of applications There is growing demand for 36 V DC motors, often being used with multi-cell lithium-ion battery packs, in an increasing range of applications. From cordless power tools to outdoor power equipment and […]
Nexperia Silicon Germanium (SiGe) rectifiers offer Cutting-edge high efficiency
https://www.electronics-lab.com/nexperia-silicon-germanium-sige-rectifiers-offer-cutting-edge-high-efficiency/
Nexperia’s SiGe rectifiers combine the high efficiency of Schottky rectifiers with the thermal stability of fast recovery diodes. Targeting automotive, server markets, and communications infrastructure, the AEC-Q101 compliant rectifiers are of particular benefit in high-temperature applications. These extremely low leakage devices allow an extended safe-operating area with no thermal runaway up to 175 °C. And, […]
Nexperia Releases New GaN FET Devices
https://www.electronics-lab.com/nexperia-releases-new-gan-fet-devices/
Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. The cascode within the devices allows for higher levels of switching FOMs and on-state performance. Features of […]
Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs
https://www.electronics-lab.com/gallium-nitride-fets-nexperia-efficient-effective-high-power-fets/
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be […]
Designing in MOSFETs for safe and reliable gate-drive operation
https://www.electronics-lab.com/designing-mosfets-safe-reliable-gate-drive-operation/
The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source voltage is the maximum gate-source voltage that the MOSFET can withstand safely. VGS-max ratings vary […]