Nexperia Releases New GaN FET Devices
Parts

Nexperia Releases New GaN FET Devices

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company's proprietary CCPAK surface mount packaging. The cascode within the devices allows...

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Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs
Parts

Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design...

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Designing in MOSFETs for safe and reliable gate-drive operation
Basic Electronics

Designing in MOSFETs for safe and reliable gate-drive operation

The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage(VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst the maximum gate-source...

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BUK9J0R9-40H – A Super Junction MOSFET with Low On-State Resistance
Parts

BUK9J0R9-40H – A Super Junction MOSFET with Low On-State Resistance

A MOSFET known as a metal-oxide-semiconductor-field-effect transistor is a special type of field-effect transistor which has an insulated gate where in this case the voltage determines the conductivity of the device. Just like conventional transistors, they are also used for switching and...

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