Dual-Channel Gate Driver for Enhancement Mode GaN Transistors
https://www.electronics-lab.com/dual-channel-gate-driver-enhancement-mode-gan-transistors/
The uP1966A from uPI Semiconductor is designed to drive both high-side and low-side GaN FETs in half-bridge topologies. It integrates an internal bootstrap supply and UVLO. The uP1966A has split gate outputs that can operate to several MHz on both high and low side drive channels, providing the ability to adjust both turn-on and turn-off […]
Researches Solve Problems of Organic Thin Film Transistors By Developing Nanostructured Gate Dielectric
https://www.electronics-lab.com/researches-solve-problems-of-organic-thin-film-transistors-by-developing-nanostructured-gate-dielectric/
Amorphous silicon-based Thin-film transistors (TFTs) are the foundation of many modern-day technologies, such as smartphones and flat-panel TVs. Still, it comes with a few drawbacks like performance limitations due to limited carrier mobility. Provoking the researchers in search of something better. As a result, Organic thin-film transistors (OTFTs) were developed. OTFTs have solved the problem with carrier mobility to […]
Researchers Demonstrate New More Efficient FET By Implementing Negative Capacitance
https://www.electronics-lab.com/71101-2/
A group of Researchers from Purdue University in Lafayette, Indiana demonstrated the effect called negative capacitance by making a new type of more energy efficient transistor. This new kind of Field Effect Transistor (FET) proves a theory introduced in 2008 by Supriyo Datta, the Thomas Duncan Distinguished Professor of Electrical and Computer Engineering, and Sayeef Salahuddin, who is a professor of Electrical Engineering and […]
GaN FETs step up performance, cut package footprint
https://www.electronics-lab.com/gan-fets-step-performance-cut-package-footprint/
by Graham Prophet @ edn-europe.com: Representing a step forward in performance and cost, the latest eGaN (gallium nitride) power FETs from Efficient Power Conversion (EPC), EPC2045 and EPC2047, are half the size of prior generation eGaN transistors with significantly higher performance. GaN FETs step up performance, cut package footprint – [Link]
Wafer-scale-packaged integrated FET switches handle 1 – 4A
https://www.electronics-lab.com/wafer-scale-packaged-integrated-fet-switches-handle-1-4a/
by Graham Prophet @ edn-europe.com: Silego Technology has developed a series of integrated power switches for use in mobile and battery powered products, to carry out power gating of functional blocks within a design; the devices come in sub-mm-size chip scale packages, handle currents from 1 to 4 A, and integrate functions such as in-rush […]
New flat transistor defies theoretical limit
https://www.electronics-lab.com/new-flat-transistor-defies-theoretical-limit/
by Bob Yirka @ techxplore.com: A team of researchers with members from the University of California and Rice University has found a way to get a flat transistor to defy theoretical limitations on Field Effect Transistors (FETs). In their paper published in the journal Nature, the team describes their work and why they believe it could […]
Open Inverter, an open source micro-solar inverter
https://www.electronics-lab.com/open-inverter-an-open-source-micro-solar-inverter/
Ken Boak has been working on an open source micro-solar inverter project: We wanted to make a design that uses readily obtainable N-type FETS and an Arduino (more strictly a ATmega328P-PU on a breadboard) to generate the PWM signals and provide simple circuit protection, and load sensing. With the PWM signals generated in firmware it […]