GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET
https://www.electronics-lab.com/gan039-650ntb-is-a-650-v-33-mohm-gallium-nitride-gan-fet/
The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features & benefits Simplified driver design as standard level MOSFET gate drivers can […]
Combinational Logic Circuits
https://www.electronics-lab.com/article/combinational-logic-circuits/
The digital logic circuit whose output, at any instant, is dependent on its inputs only, is referred to as a combinational logic circuit. The output state(s) of the combinational logic circuit is the logical result of the combination of its inputs and does not involve any kind of memory or storage, etc. Contrary to this, […]
Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
https://www.electronics-lab.com/teledyne-e2v-hirel-announces-new-100-v-high-speed-20-mhz-fet-and-gan-transistor-driver-flip-chip-die/
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules and space motor drives. The TD99102 is an […]
EPC2067 40 V, 409 A(pulsed) eGaN FET
https://www.electronics-lab.com/epc2067-40-v-409-apulsed-egan-fet/
EPC’s EPC2067 is a 40 V eGaN FET for state-of-the-art power density The EPC2067 from EPC is a 40 V, 1.3 mΩ (typical) eGaN FET with a pulsed current rating of 409 A in a tiny 9.3 mm2 footprint. This device is ideal for applications with demanding high power density performance requirements, including 48 V to […]
SiC power FETs boast super-low 6-mΩ RDS(on)
https://www.electronics-lab.com/sic-power-fets-boast-super-low-6-m%cf%89-rdson/
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are available in the […]
STDRIVEG600 Gate Driver for GaN Transistors
https://www.electronics-lab.com/stdriveg600-gate-driver-for-gan-transistors/
STMicroelectronics’ single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs STMicroelectronics’ STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up […]
GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board
https://www.electronics-lab.com/gan-is-as-easy-to-use-as-silicon-epc-introduces-a-48-v-to-12-v-demo-board/
EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from […]
EPC2218 Enhancement-Mode GaN Power Transistors
https://www.electronics-lab.com/epc2218-enhancement-mode-gan-power-transistors/
EPC’s 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC’s EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with solder bars and a die size of 3.5 mm x 1.95 mm. The EPC2218 is ideal for 48 VOUT […]
Nexperia Releases New GaN FET Devices
https://www.electronics-lab.com/nexperia-releases-new-gan-fet-devices/
Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. The cascode within the devices allows for higher levels of switching FOMs and on-state performance. Features of […]
Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs
https://www.electronics-lab.com/gallium-nitride-fets-nexperia-efficient-effective-high-power-fets/
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be […]