Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia's normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.
Key features
- VDS : 650 V
- Threshold voltage: +4 V
- Transient over voltage V DS : 800 V
- VGS range: 20 V
Benefits
- Easy to drive
- Inherently safe against parasitic turn on
- Reduced losses in reverse conduction mode
- Ultra low Qrr for fast switching
- Transient over voltage capability
- Robust gate oxide
more information: www.nexperia.com
