Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs

Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs

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Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia’s normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.

Key features

  • VDS : 650 V
  • Threshold voltage: +4 V
  • Transient over voltage V DS : 800 V
  • VGS range: 20 V

Benefits

  • Easy to drive
  • Inherently safe against parasitic turn on
  • Reduced losses in reverse conduction mode
  • Ultra low Qrr for fast switching
  • Transient over voltage capability
  • Robust gate oxide

more information: www.nexperia.com

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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