Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor

Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). The leadless small SMD plastic package with solderable side pads reduces printed circuit board (PCB) area requirements.

Features

• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain (hFE) at high I_C
• High efficiency due to less heat generation
• High-temperature applications up to 175°C
• Reduced Printed-Circuit Board (PCB) area requirements
• Leadless small SMD plastic package with solderable side pads
• Exposed heat sink for excellent thermal and electrical conductivity
• Suitable for Automatic Optical Inspection (AOI) of solder joint
• Qualified according to AEC-Q101 and recommended for use in automotive applications

more information: https://www.nexperia.com/products/bipolar-transistors/general-purpose-and-low-vcesat-bipolar-transistors/single-bipolar-transistors/single-bipolar-transistors-100-v/PBSS4310PAS-Q.html

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