Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor

Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor

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Nexperia PBSS4310PAS-Q NPN Low VCEsat Transistor features a very low collector-emitter saturation voltage, high collector current capability, and high efficiency due to less heat generation. The PBSS4310PAS-Q is housed in an ultra-thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). The leadless small SMD plastic package with solderable side pads reduces printed circuit board (PCB) area requirements.

Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • High-temperature applications up to 175°C
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Leadless small SMD plastic package with solderable side pads
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

more information: https://www.nexperia.com/products/bipolar-transistors/general-purpose-and-low-vcesat-bipolar-transistors/single-bipolar-transistors/single-bipolar-transistors-100-v/PBSS4310PAS-Q.html

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Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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