Samsung unveils 12-layer 3D-TSV chip packaging technology
Technology

Samsung unveils 12-layer 3D-TSV chip packaging technology

An industry’s first, the 12-layer 3D-TSV (Through Silicon Via) technology developed by Samsung Electronics enables the stacking of 12 DRAM chips using more than 60,000 TSV holes, while maintaining the same thickness as current 8-layer chips. By Julien Happich @...

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Samsung 12Gb LPDDR5 DRAM now in mass production
IC

Samsung 12Gb LPDDR5 DRAM now in mass production

Samsung Electronics announced it has begun mass producing the industry’s first 12-gigabit LPDDR5 mobile DRAM, optimized for enabling 5G and AI features in future smartphones. The new mobile DRAM memory comes just five months after announcing mass production of the 12GB LPDDR4X. The...

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Samsung Develops Industry’s First 3rd-generation 10nm-Class DRAM
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Samsung Develops Industry’s First 3rd-generation 10nm-Class DRAM

New 8Gb DDR4 based on most advanced 1z-nm process enables DRAM solutions with ultra-high performance and power efficiency. Samsung Electronics, the world leader in advanced memory technology, today announced that it has developed a 3rd-generation 10-nanometer-class (1z-nm)...

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Testing DRAM Using an Arduino
Arduino

Testing DRAM Using an Arduino

Chris @ insentricity.com wanted to test a few dozen individual RAM chips so he decided to use Arduino to make his life a little bit easier. In the article he explains the interface with Arduino and gives the code on github. My first thought was to test the chips in the TL866CS, but...

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Samsung launches industry’s first 12Gb LPDDR4 DRAM
Technology

Samsung launches industry’s first 12Gb LPDDR4 DRAM

by Samsung: Samsung Electronics announced that it is mass producing the industry's first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology. The newest LPDDR4 is expected to significantly accelerate the...

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