7mΩ SiC FETs deliver better performance, improved efficiency and lower losses

7mΩ SiC FETs deliver better performance, improved efficiency and lower losses

With an RDS(on) of just 7 mΩ, the new SiC-FETs from UnitedSiC are designed for high performance switching in high power applications such as motor control in the automotive sector or for DC/DC converters and vehicle chargers .

Based on a unique cascode configuration, the UF3C/UF3SC series provides higher switching speeds, higher efficiency, and lower losses while at the same time offering a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be realized without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50 percent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.

Features

  • 650V and 1200V
  • Low RDS(on) from 7mohm to 150mohm
  • Excellent body diode performance (Vf < 2V)
  • Drive with any Si and/or SiC gate drive voltage
  • Integrated ESD and gate protection
  • Full suite of industry standard packages – TO-220-3L, D2PAK-3L, TO-247-3L & -4L (Kelvin)

more information: unitedsic.com

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About mixos

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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