Logic NOT Gate
https://www.electronics-lab.com/article/logic-not-gate/
Logic NOT Gate The logic NOT gate always returns a not (opposite) of the input signal. It is the simplest and most basic form of a logic gate having only one input and one output. The logic NOT gate is also termed as Inverting Buffer or an Inverter because of its inverting response. A logic […]
High density robust SSD offers densities up to 1TB in a 16×20 mm BGA
https://www.electronics-lab.com/high-density-robust-ssd-offers-densities-up-to-1tb-in-a-16x20-mm-bga/
2100AI/AT SSD Family – High density robust SSD offers densities up to 1TB in a 16×20 mm BGA Micron has officially launched the Micron 2100AI/AT– an industrial- and automotive-grade PCIe NVMe Industrial SSD family based on 64-layer triple-level cell (TLC) 3D NAND technology. Available in 64GB-1TB BGA and 256GB-1TB M.2 form factors, the new 2100AI/AT […]
Western Digital iNand IX EM132
https://www.electronics-lab.com/western-digital-inand-ix-em132/
iNand IX EM132 – Industrial Embedded Flash Device. The Industrial iNAND IX EM132 Embedded Flash Drive (EFD) is Western Digital’s most advanced e.MMC flash storage solution for industrial applications, with high reliability and endurance across a wide range of operational requirements. Designed and tested to withstand demanding environmental conditions, this industrial- grade flash device features advanced […]
3D memory die boasts 100+ layer design
https://www.electronics-lab.com/3d-memory-die-boasts-100-layer-design/
Samsung Electronics announced it has begun mass producing 250-gigabyte (GB) SATA solid state drive (SSD) that integrates the company’s sixth-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND for global PC OEMs. by Julien Happich @ eenewseurope.com Utilizing Samsung’s unique ‘channel hole etching’ technology, the new V-NAND adds around 40-percent more cells to the previous 9x-layer single-stack structure. […]
Greenliant Delivers Ultra-Fast Speeds with NVMe M.2 ArmourDrive SSDs
https://www.electronics-lab.com/greenliant-delivers-ultra-fast-speeds-nvme-m-2-armourdrive-ssds/
Greenliant has started sampling its NVMe M.2 ArmourDrive™ solid state drive (SSD) modules to customers requiring high-performance, high-capacity removable data storage that can withstand extreme environments. The new industrial temperature (-40°C to +85°C) 88 PX Series NVMe M.2 ArmourDrive SSDs use 3-bits-per-cell (TLC) 3D NAND flash memory and are built in the widely used 2242 […]
3D TLC NAND Flash technology enters the Industry
https://www.electronics-lab.com/3d-tlc-nand-flash-technology-enters-industry/
3D TLC NAND flash based products are already dominating in SSD for consumers. Sophisticated NAND FLASH manufacturing technology, new advanced FLASH controllers and firmware now allow using 3D TLC NAND in industrial grade SSDs. Apacer introduces a new ST170 series in 2.5″ SSD, M.2, mSATA, MO-297, CFast and uSSD form factors. To make products reliable and […]
Understanding Flash Memory And How It Works
https://www.electronics-lab.com/understanding-flash-memory-and-how-it-works/
Flash memory is one of the most widely used types of non-volatile memory. NAND Flash is designed for modern file storage which replaced old disk drives. This article provides a brief understanding of how NAND Flash technology works. The basic storage component used in Flash memory is a modified transistor. In a standard transistor, the […]
SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash
https://www.electronics-lab.com/sk-hynix-introduces-industrys-highest-72-layer-3d-nand-flash/
SK Hynix Incorporated introduced the world’s first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb 3D NAND chips since November 2016. Within 5 months the researchers in SK […]
Samsung and Toshiba Will Start 64-layer 3D NAND Production Soon
https://www.electronics-lab.com/samsung-toshiba-will-start-64-layer-3d-nand-production-soon/
Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement succeeds the 48-layer BiCS FLASH one. Western Digital, the well known industry-leading […]
Toshiba launches 256-Gbit 48-layer 3-D NAND flash
https://www.electronics-lab.com/toshiba-launches-256-gbit-48-layer-3-d-nand-flash/
by Susan Nordyk @ edn.com: Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process, BiCS flash surpasses the capacity of conventional 2-D NAND flash memory, where cells are arrayed […]