Tag: NAND

SK Hynix Incorporated introduced the world's first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb...

Toshiba will start mass production of 64-layer 3D NAND, BiCS3, with 3-bit-per-cell technology and a 64GB capacity in the first half of 2017. The applications of this new massive storage chip include enterprise and consumer SSD, smartphones, tablets and memory cards. This achievement...

by Susan Nordyk @ edn.com: Ready for sampling in September, Toshiba’s 48-layer BiCS (Bit Cost Scalable) flash memory stores 256 Gbits using a 3-D vertically stacked cell structure and 3-bit-per-cell triple-level cell technology. By employing this 48-layer vertical stacking process,...