Tag Archives: RAM

Inside Intel’s first product: the 3101 RAM chip held just 64 bits

Ken Shirriff takes a look inside the 3110 RAM chip from Intel. He writes:

Intel’s first product was not a processor, but a memory chip: the 31011 RAM chip, released in April 1969. This chip held just 64 bits of data (equivalent to 8 letters or 16 digits) and had the steep price tag of $99.50. The chip’s capacity was way too small to replace core memory, the dominant storage technology at the time, which stored bits in tiny magnetized ferrite cores. However, the 3101 performed at high speed due to its special Schottky transistors, making it useful in minicomputers where CPU registers required fast storage. The overthrow of core memory would require a different technology—MOS DRAM chips—and the 3101 remained in use in the 1980s.3

Inside Intel’s first product: the 3101 RAM chip held just 64 bits – [Link]

The New Fujitsu ReRam

Resistive random-access memory (RRAM or ReRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor.

Fujitsu Semiconductor has just launched world’s largest density 4 Mbit ReRAM product for mass production: MB85AS4MT. Partnering with Panasonic Semiconductor Solutions, this chip came to life.

The MB85AS4MT is an SPI-interface ReRAM product that operates with a wide range of power supply voltage, from 1.65V to 3.6V. It features an extremely small average current in read operations of 0.2mA at a maximum operating frequency of 5MHz.

It is optimal for battery operated wearable devices and medical devices such as hearing aids, which require high density, low power consumption electronic components.

20161029154434_mb85as4mt

Main Specifications
  • Memory Density (configuration): 4 Mbit (512K words x 8 bits)
  • Interface: Serial peripheral interface (SPI)
  • Operating power supply voltage: 1.65V – 3.6V
  • Low power consumption:
    • Read operating current: 0.2mA (at 5MHz)
    • Write operating current: 1.3mA (during write cycle time)
    • Standby current: 10µA
    • Sleep current: 2µA
  • Guaranteed write cycles: 1.2 million cycles
  • Guaranteed read cycles: Unlimited
  • Write cycle time (256 byte page): 16ms (with 100% data inversion)
  • Data retention: 10 years (up to 85°C)
  • Package: 209 mil 8-pin SOP

This figure shows the block diagram of the chip:

reram

MB85AS4MT is suitable for lots of applications like medical devices, and IoT devices such as meters and sensors. In addition, the chip has the industry’s lowest power consumption for read operations in non-volatile memory.

For more information about MB85AS4MT, you can check the datasheet and the official website.

Samsung launches industry’s first 12Gb LPDDR4 DRAM

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by Samsung:

Samsung Electronics announced that it is mass producing the industry’s first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on its advanced 20-nanometer (nm) process technology.

The newest LPDDR4 is expected to significantly accelerate the adoption of high capacity mobile DRAM worldwide. The 12Gb LPDDR4 brings the largest capacity and highest speed available for a DRAM chip, while offering excellent energy efficiency, reliability and ease of design – all essential to developing next-generation mobile devices.

Samsung launches industry’s first 12Gb LPDDR4 DRAM – [Link]