Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory)

Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.

Fujitsu Semiconductor FRAM is offered in serial (SPI and I²C interfaces) and parallel (parallel interface) variants and in a wide range of compact, high-density package types. Memory size options are available from 4Kbit up to 8Mbit.

Features

• Non-volatile
  • Stored data is not lost at power off
  • No battery is needed for data retention
• Low power consumption
  • No booster circuit is required for a write operation
  • 92% lower write power consumption than EEPROM
  • No data retention current required to retain data
• High read/write cycle endurance
  • Guarantees 10 trillion (10¹³) read/write cycles
  • 10 million times of EEPROM’s endurance
• Fast write speed
  • Can overwrite data without an erase operation

more information: https://www.fujitsu.com/jp/group/fsm/en/products/fram/

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