IBM scientists achieve storage memory breakthrough

IBM scientists achieve storage memory breakthrough

3613
Views
0 Comments

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM).

The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last several years PCM has attracted the industry’s attention as a potential universal memory technology based on its combination of read/write speed, endurance, non-volatility and density. For example, PCM doesn’t lose data when powered off, unlike DRAM, and the technology can endure at least 10 million write cycles, compared to an average flash USB stick, which tops out at 3,000 write cycles.

IBM scientists achieve storage memory breakthrough – [Link]

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

view all posts by admin

Leave a Reply

Archives