Tag Archives: MOSFET

LTC7003 – Fast 60V Protected High Side NMOS Static Switch Driver

The LTC7003 is a fast high side N-channel MOSFET gate driver that operates from input voltages up to 60V. It contains an internal charge pump that fully enhances an external N-channel MOSFET switch, allowing it to remain on indefinitely. Its powerful driver can easily drive large gate capacitances with very short transition times, making it well suited for both high frequency switching applications or static switch applications that require a fast turn-on and/or turn-off time. When an internal comparator senses that the switch current has exceeded a preset level, a fault flag is asserted and the switch is turned off after a period of time set by an external timing capacitor. After a cooldown period, the LTC7003 automatically retries.

LTC7003 – Fast 60V Protected High Side NMOS Static Switch Driver – [Link]

SUNY Polytechnic Creates 3-in-1 Device That Can Be A Diode, A MOSFET And A BJT

In a recently published study, a team of researchers at SUNY Polytechnic Institute in Albany, New York, has suggested that combining multiple functions in a single semiconductor device can significantly improve device’s functionality and efficiency.

Nowadays, the semiconductor industry is striving to scale down the device dimensions in order to fit more transistors onto a computer chip and thus improve the speed and efficiency of the devices. According to Moore’s law, the number of transistors on a computer chip cannot exponentially increase forever. For this reason, scientists are trying to find other ways to improve semiconductor technologies.

To demonstrate the new technology which can be an alternative to Moore’s law, the researchers of SUNY Polytechnic designed and fabricated a reconfigurable device that can be a p-n diode (which functions as a rectifier), a MOSFET (for switching), and a bipolar junction transistor (or BJT, for current amplification). Though these three devices can be fabricated individually in modern semiconductor fabrication plants, it often becomes very complex if they are to be combined.

reconfigurable 3-in-1 semiconductor device
the reconfigurable 3-in-1 semiconductor device

Ji Ung Lee at the SUNY Polytechnic Institute said,

We are able to demonstrate the three most important semiconductor devices (p-n diode, MOSFET, and BJT) using a single reconfigurable device. We can form a single device that can perform the functions of all three devices.

The multitasking device is made of 2-D tungsten diselenide (WSe2), a new transition metal dichalcogenide semiconductor. This class of materials is special as the bandgap is tunable by varying the thickness of the material. It is a direct bandgap while in single layer form.

Another challenge was to find a suitable doping technique as WSe2 lacks one being a new material. So, to integrate multiple functions into a single device, the researchers developed a completely new doping method. By doping, the researchers could obtain properties such as ambipolar conduction, which is the ability to conduct both electrons and holes under different conditions. Lee said,

Instead of using traditional semiconductor fabrication techniques that can only form fixed devices, we use gates to dope.

These gates can control which carriers (electrons or holes) should flow through the semiconductor. In this way, the ambipolar conduction is achieved. The ability to dynamically change the carriers allows the reconfigurable device to perform multiple functions. Another advantage of using gates in doping is, it saves overall area and enable more efficient computing. As consequence, the reconfigurable device can potentially implement certain logic functions more compactly and efficiently.

In future, researchers plan to investigate the applications of this new technology and want to enhance its efficiency further. As Lee said,

We hope to build complex computer circuits with fewer device elements than those using the current semiconductor fabrication process. This will demonstrate the scalability of our device for the post-CMOS era.

Integrated Load Switches versus Discrete MOSFETs

Alek Kaknevicius @ ti.com discuss about load switches and the advantages of intergrated switches over discrete ones.

The most common approach to load switching solutions is to use a Power MOSFET surrounded by discrete resistors and capacitors; however, in most cases using a fully integrated load switch has significant advantages. While both discrete and integrated load switching solutions perform the same basic function (turn on and turn off), distinctions exist, such as the transient behavior and total solution size. This application report highlights many drawbacks and limitations of a discrete switching solution and discusses how they can be overcome with an integrated load switch.

Integrated Load Switches versus Discrete MOSFETs – [Link]

InGaAs TFET, a potential alternative to MOSFET in future ultralow power chips

by Graham Prophet @ edn-europe.com:

Belgian researchers from imec, at a conference** dedicated to compound semiconductor technology, are to present promising device results with a InGaAs-only TFET (tunnel field-effect transistor) that achieves a sub-60 mV/decade sub-threshold swing at room temperature.

A 400W (1kW Peak) 100A Electronic Load Using Linear MOSFETs

Kerry Wong built a 400W/100A electronic load using linear MOSFETs. He writes:

I bought a couple of IXYS linear MOSFETs (IXTK90N25L2) a while ago to test their capabilities when used as electronic load, and the result was quite impressive. So I decided to build another electronic load using both MOSFETs. As you can see in the video towards the end, this electronic load can sink more than 100 Amps of current while dissipating more than 400W continuously and can withstand more than 1kW of power dissipation in pulsed operation mode.

A 400W (1kW Peak) 100A Electronic Load Using Linear MOSFETs – [Link]

LT8390 – 60V Synchronous 4-Switch Buck-Boost Controller with Spread Spectrum

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The LT8390, is a synchronous buck-boost DC/DC controller that can regulate output voltage, and input or output current from input voltages above, below and equal to the output voltage. Its 4V to 60V input voltage range and 0V to 60V output voltage range are ideal for voltage regulator, battery and supercap charger applications in automotive, industrial, telecom and even battery-powered systems. The LT8390’s 4-switch buck-boost controller, combined with 4 external N-channel MOSFETs, can deliver from 10W to over 400W of power with efficiencies up to 98%. Its buck-boost capability is ideal for applications such as automotive, where the input voltage can vary dramatically during stop/start, cold crank and load dump conditions. Transitions between buck, buck-boost and boost operating modes are seamless, offering a well regulated output even with wide variations of supply voltage. The LT8390 is offered in either a 28-lead 4mm x 5mm QFN or thermally enhanced TSSOP to provide a very compact solution footprint. [source]

LT8390 – 60V Synchronous 4-Switch Buck-Boost Controller with Spread Spectrum – [Link]

Load switch with self-resetting circuit breaker

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has designed a simple load switch using two transistors and some resistors.

The simple current-limiting load switch shown in Figure 1 will be familiar to most readers. In this circuit, a high level signal applied to the input switches on MOSFET Q2, which energizes the load. The load current is limited by negative feedback applied via Q1.

Load switch with self-resetting circuit breaker – [Link]

The new 800V CoolMOS MOSFET from Infineon

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Thomas Scherer @ elektormagazine.com shares the news about a CoolMOS Mosfet from Infineon.

The latest 800V CoolMOS P7 800V MOSFET from Infineon is based on their superjunction technology. The device is available in twelve classes of RDS(on) beginning with  0.28 Ω and in six package options. It is particularly suited to high voltage switching applications, flyback applications including adapter and charger, LED lighting, audio SMPS, AUX and industrial power.

The new 800V CoolMOS MOSFET from Infineon – [Link]

FemtoFET – 20V 500mA 0.6×0.7mm MOSFET From TI

Texas Instruments “TI” recently announced  FemtoFET series.
There are N-channel MOSFETS like CSD15380F3 and P-channel MOSFETS like CSD25480F3 and CSD23280F3 in this series. These transistors are SMD (Surface Mount Devices) available in a very small package, the land grid array (LGA) package.

Traditional SOT-23 package next to the CSD18541F5 LGA package. Image Source: TI
Traditional SOT-23 package next to the CSD18541F5 LGA package. Image Source: TI

To explore this family we will highlight the FemotoFET MOSFET CSD15380F3. It has a 20V Vds, 990 mohm Rds @ Vgs=8, 500mA maximum Id, 0.5W power dissipation and ultra-small LGA Footprint 0.73 mm × 0.64 mm which make it suitable for many handheld and mobile applications.

Pin-out of CSD15380F3
Pin-out of CSD15380F3
LGA Package
LGA Package

The new MOSFET has Qg = 0.216 nC Ultra-low capacitance and that improves switching speeds in data line applications.

Table Source: Product Page
Table Source: Product Page

It’s available on Mouser for 0.47$ for 1 unit order and 0.05$ for 1,000 unit order and need 6 weeks lead time.
Via: TI E2E Community Blog

App note: Solid-State Relays

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Solid-state relays introduction from Vishay, (PDF)

MOSFET SSRs feature an optocoupler construction, but have a pair of MOSFETs on the output instead of a phototransistor. A pair of source-coupled MOSFETs emulate an electromechanical relay by providing bidirectional switch capability and a linear contact. No output power supply is required.

App note: Solid-State Relays – [Link]