3-MP image sensor targets security surveillance, IP, and HD cameras
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3-MP image sensor targets security surveillance, IP, and HD cameras

Omnivision’s OS03B10 3-MP image sensor with DVP and MIPI interface support brings high-quality images to security, IP, and HD cameras. Omnivision has introduced the OS03B10 3-megapixel (MP) 1/2.7-inch optical format CMOS image sensor for security surveillance, IP, and HD analog...

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New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency
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New 150V N-channel Power MOSFET with Low On-Resistance to Improve Power Supply Efficiency

Toshiba has launched a 150V N-channel power MOSFET “TPH9R00CQH” that uses the latest generation process, “U-MOSX-H,” and that is suitable for use in switching power supplies for industrial equipment - including those deployed in data centers and communications base stations....

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Kyocera AVX PrizmaCap™ Supercapacitor is 3500 mF
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Kyocera AVX PrizmaCap™ Supercapacitor is 3500 mF

Kyocera AVX PrizmaCap™ Capacitors use an activated carbon electrode and have a propylene carbonate-based (PC) electrolyte with a paper separator and SMT leads. The PrizmaCap current collector is made of a special low ESR-type aluminum. The PrizmaCap features a cell voltage of...

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Vishay Semiconductors VCAN26 BiSy ESD Protection Diodes
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Vishay Semiconductors VCAN26 BiSy ESD Protection Diodes

Vishay Semiconductors VCAN26 Bidirectional Symmetrical (BiSy) ESD Protection Diodes are low capacitance, dual-line ESD protection diodes in a small SOT-323 package. The VCAN26 is designed for CAN-BUS applications with a flexible data rate (CAN FD). The 2-line protection diodes offer a...

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Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches
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Dual-channel low-side 4/5-A gate driver ICs handle fast MOSFET, WBG switches

Infineon Technologies AG has released the new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness...

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SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor
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SGT120R65AL – 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable...

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New N-Channel MOSFET with Maximum Power Dissipation of 0.5W
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New N-Channel MOSFET with Maximum Power Dissipation of 0.5W

Compact N-Channel 30V MOSFET from Vishay in Stock at TTI TTI, Inc., a leading specialty distributor of electronic components, has stock for immediate shipment of Vishay’s TrenchFET® Si1308EDL 30V N-Channel MOSFET in the compact SOT-323/SC-70 surface mount package. The three-leaded...

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Infineon CoolSiCTM MOSFET for 650 V, 1200 V, and 1700 V at Rutronik
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Infineon CoolSiCTM MOSFET for 650 V, 1200 V, and 1700 V at Rutronik

Infineon’s CoolSiC™ MOSFETs use an optimized, state-of-the-art trench semiconductor process that enables both the lowest losses in the application and the highest reliability in operation. The products, with voltage classes of 1700 V, 1200 V, and 650 V and forward resistances...

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