Writing to flash and EEPROM on the tinyAVR 1-series
Mcu

Writing to flash and EEPROM on the tinyAVR 1-series

Update your tinyAVR code to access memories when using 1-series tinyAVRs. Link here (PDF) On tinyAVR® 1-series devices, access to Flash memory and EEPROM has been changed from that on previous tinyAVR devices. This means that existing code for writing to Flash and EEPROM on older...

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512Gbyte embedded universal flash memory in production
IC

512Gbyte embedded universal flash memory in production

Samsung Electronics has begun mass production of what the company claims to be the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. by Julien Happich  @ eenewseurope.com: The 512GB eUFS packs eight of...

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SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip
IC

SST26WF064C – Low-voltage 64-Megabit SuperFlash® Memory Device From Microchip

Microchip introduced a new 64Mbit Serial Quad I/O™ memory device—SST26WF064C with proprietary SuperFlash® technology. The SST26WF064C writes with a single power supply of 1.65-1.95V and significantly lower power consumption. This makes it ideal for wireless, mobile, and...

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96-Layer Memory Chips By Toshiba
HardwareProductsTechnology

96-Layer Memory Chips By Toshiba

The need for larger memory storage for smartphones will never stop, especially with the continuous development of larger and stronger applications. This need is always pushing semiconductor manufacturers to keep trying to fit as much bits as possible in  smaller volumes and with lower...

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SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash
ScienceTechnology

SK Hynix Introduces Industry’s Highest 72-Layer 3D NAND Flash

SK Hynix Incorporated introduced the world's first 72-Layer 256Gb (Gigabit) 3D (Three-Dimensional) NAND Flash based on its TLC (Triple-Level Cell) arrays and own technologies. This company also launched 6-Layer 128Gb 3D NAND chips in April 2016 and has been mass producing 48-Layer 256Gb...

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64-layer flash IC enables 1-Tbyte chips
IC

64-layer flash IC enables 1-Tbyte chips

Susan Nordyk @ edn.com writes: Toshiba has added a 512-Gbit (64-Gbyte), 64-layer flash memory device that employs 3-bit-per-cell TLC (triple-level cell) technology to its BiCS Flash product line. This technology will allow the development of 1-terabyte memory chips for use in...

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Slave Flash Trigger
Mcu

Slave Flash Trigger

A Programmable Optical Slave Flash Trigger for Digital Cameras with PIC 12F675 Slave Flash Trigger -...

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How to Upgrade Your ESP8266 SPI Flash to 4MB
Mcu

How to Upgrade Your ESP8266 SPI Flash to 4MB

ESP8266, the well known WiFi module contains an ESP8266EX SoC IC and an external SPI flash. This external SPI flash is used together with ESP8266EX to store user programs. The supported size of flash by ESP8266EX is up to 16MB but some of ESP8266 modules contain flash chips with low...

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