Tag: SiC

WeEn Semiconductors to Showcase Enhanced Thermal Performance Package Technology for SiC MOSFETs and Diodes at PCIM 2025
TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI and extended reliability in automotive, renewable energy and high-power server applications WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power...
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SemiQ 1200 V SiC MOSFETs Six-Pack Modules with High Power Density and Low Switching Losses Enables Compact, Cost-Optimized Systems
High-speed switching MOSFETs tested to over 1350 V with 100% WLBI, applications include EV charging, energy storage, UPS and motor drives SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and...
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STMicroelectronics unveils new generation of SiC power technology tailored for next-generation EV traction inverters
Smaller, more efficient products to ramp-up in volumes through 2025 across 750V and 1200V classes, will bring the advantages of silicon carbide beyond premium models to mid-size and compact electric vehicles. ST plans to introduce multiple silicon carbide technology innovations...
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onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET
onsemi NTHL045N065SC1 Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and high reliability compared to Silicon. This compact chip-sized MOSFET is designed with low ON resistance and ensures low capacitance and gate charge. The...
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GeneSiC Semiconductor 3300V SiC MOSFETs
GeneSiC Semiconductor 3300V SiC MOSFETs offer fast and efficient switching with reduced ringing in an optimized package with a separate driver source pin. The 3300V SiC MOSFETs are designed to be compatible with commercial gate drivers and provide ease of paralleling without a thermal...
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SiC power FETs boast super-low 6-mΩ RDS(on)
At an RDS(on) value of less than half the nearest SiC MOSFET competitor, a new 6-mΩ device also provides a robust short-circuit withstand time rating of 5 μsec. The new 750-V SiC FET series includes nine new device/package options rated at 6, 9, 11, 23, 33, and 44 mΩ. All devices are...
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BM2SC12xFP2-LBZ Quasi-Resonant AC/DC Converter
ROHM's BM2SC12xFP2-LBZ quasi-resonant AC/DC converter with built-in 1700 V SiC-MOSFET features a wide input voltage range. ROHM's large current integrated FET type switching regulators are compatible with virtually all switching power supply applications. Features include a wide...
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Silicon Carbide (SiC) Ultra-Fast Switching MOSFETs – LSIC1MO Series
Littelfuse offers enhancement-mode N-channel SiC MOSFET, LSIC1MO series SiC MOSFETs from IXYS: A Littelfuse Technology offer an exceptional alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved...
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