Tag: SiC

CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET...

UnitedSiC has developed silicon carbide transistors in standard packages with the world's lowest on resistance. Chris Dries, CEO, talks to Nick Flaherty about the significance of the move. UnitedSiC has launched four silicon carbide SiC transistors with the world's lowest on...

Silicon carbide (SiC) is en route to mainstream for applications like photovoltaic and uninterruptable power supplies. Infineon Technologies AG is now targeting the next group of applications for this wide bandgap technology: The evaluation board EVAL-M5-E1B1245N-SiC will help to pave...

CISSOID, the leader in high temperature semiconductors for the most demanding markets, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the world's leading exhibition and conference for power electronics, intelligent motion, renewable...

Littelfuse, Inc. today introduced two second-generation series of 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). They offer power...

This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and...

Coping with rapid technological advances and finding efficient energy solutions are the keys for development of power electronics of the future. A new research had been done in North Carolina State University about increasing the efficiency of high-power switches. Silicon Carbide is a...

by R. Colin Johnson @ eetimes.com: PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and...