High-Performance Silicon Carbide (SiC) Schottky Diodes
https://www.electronics-lab.com/high-performance-silicon-carbide-sic-schottky-diodes/
MCC’s SiC diodes are well-suited for inverters for solar and motion control, UPS, Telekom base stations, PFC, and lighting Micro Commercial Components’ high-performance SiC Schottky diodes provide a high-efficiency, high-temperature performance of up to +175°C. These diodes, together with the 650 V super-junction MOSFETs, create a complete cost-efficient discrete solution. These SiC diodes are available […]
CISSOID announces 3-Phase SiC MOSFET Intelligent Power Module for E-mobility
https://www.electronics-lab.com/cissoid-announces-3-phase-sic-mosfet-intelligent-power-module-e-mobility/
CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers. Co-optimizing the electrical, mechanical and thermal design of the power […]
Driving down the on resistance of silicon carbide transistors
https://www.electronics-lab.com/driving-resistance-silicon-carbide-transistors/
UnitedSiC has developed silicon carbide transistors in standard packages with the world’s lowest on resistance. Chris Dries, CEO, talks to Nick Flaherty about the significance of the move. UnitedSiC has launched four silicon carbide SiC transistors with the world’s lowest on resistance RDS(on) to open up new applications. “What we are doing is pretty incredible […]
CoolSiC™ MOSFET evaluation board for motor drives up to 7.5 kW
https://www.electronics-lab.com/coolsic-mosfet-evaluation-board-motor-drives-7-5-kw/
Silicon carbide (SiC) is en route to mainstream for applications like photovoltaic and uninterruptable power supplies. Infineon Technologies AG is now targeting the next group of applications for this wide bandgap technology: The evaluation board EVAL-M5-E1B1245N-SiC will help to pave the way for SiC in motor drives and help strengthening Infineon’s market position as #1 […]
CISSOID to exhibit new High Temperature Gate Drivers, SiC MOSFET’s and Power Modules
https://www.electronics-lab.com/cissoid-exhibit-new-high-temperature-gate-drivers-sic-mosfets-power-modules/
CISSOID, the leader in high temperature semiconductors for the most demanding markets, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the world’s leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management. The company is introducing a new Gate Driver board optimized for […]
GEN2 650V SiC Schottky Diodes Offer Improved Efficiency, Reliability and Thermal Management
https://www.electronics-lab.com/gen2-650v-sic-schottky-diodes-offer-improved-efficiency-reliability-thermal-management/
Littelfuse, Inc. today introduced two second-generation series of 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). They offer power electronics system designers a variety of performance advantages, including negligible reverse recovery current, high surge […]
Dual Channel SiC MOSFET Gate Driver Reference Design
https://www.electronics-lab.com/dual-channel-sic-mosfet-gate-driver-reference-design/
This reference design is an automotive qualified isolated gate driver solution for driving Silicon Carbide (SiC) MOSFETs in half bridge configuration. The design includes two push pull bias supplies for the dual channel isolated gate driver respectively and each supply provides +15V and -4V output voltage and 1W output power. The gate driver is capable […]
A Cost-efficient Super-Cascode SiC Switch
https://www.electronics-lab.com/cost-efficient-super-cascode-sic-switch/
Coping with rapid technological advances and finding efficient energy solutions are the keys for development of power electronics of the future. A new research had been done in North Carolina State University about increasing the efficiency of high-power switches. Silicon Carbide is a compound of silicon and carbon with chemical formula SiC. It is a wide […]
SiC/GaN Poised for Power
https://www.electronics-lab.com/sicgan-poised-for-power/
by R. Colin Johnson @ eetimes.com: PORTLAND, Ore.—Today Yole Development predicted that power transistors would radically shift from silicon wafers to silicon carbide (SiC) and gallium nitride (GaN) substrates—to achieve higher power in smaller spaces, according to its GaN and SiC Devices for Power Electronics Applications report. One of the big drivers behind the shift is the […]