ON Semiconductor NTx015N065SC1 silicon carbide MOSFET
Parts

ON Semiconductor NTx015N065SC1 silicon carbide MOSFET

Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over...

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STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode
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STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode

STPSC8H065 - 650 V, 8 A high surge silicon carbide power Schottky diode This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a...

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GaO beats SiC in channel mobility
Science

GaO beats SiC in channel mobility

Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide...

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Driving down the on resistance of silicon carbide transistors
Parts

Driving down the on resistance of silicon carbide transistors

UnitedSiC has developed silicon carbide transistors in standard packages with the world's lowest on resistance. Chris Dries, CEO, talks to Nick Flaherty about the significance of the move. UnitedSiC has launched four silicon carbide SiC transistors with the world's lowest on...

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