ROHM 5th Gen SiC MOSFETs Cut High-Temperature On-Resistance by 30%
https://www.electronics-lab.com/rohm-5th-gen-sic-mosfets-cut-high-temperature-on-resistance-by-30/
New EcoSiC power devices target EV traction inverters, AI server PSUs, and industrial systems with improved efficiency and lower thermal losses.
ON Semiconductor NTx015N065SC1 silicon carbide MOSFET
https://www.electronics-lab.com/on-semiconductor-ntx015n065sc1-silicon-carbide-mosfet/
Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and […]
STMicroelectronics STPSC8H065 is a silicon carbide power Schottky diode
https://www.electronics-lab.com/stmicroelectronics-stpsc8h065-silicon-carbide-power-schottky-diode/
STPSC8H065 – 650 V, 8 A high surge silicon carbide power Schottky diode This 8 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to […]
GaO beats SiC in channel mobility
https://www.electronics-lab.com/gao-beats-sic-channel-mobility/
Startup company Flosfia has reported that its gallium-oxide power semiconductor can outperform the characteristics of silicon-carbide, but in a normally-off configuration. Flosfia Ltd. (Tokyo, Japan), founded in 2011, is a pioneer of the use of corundum-structured gallium oxide (α-Ga2O3) as a power semiconductor. The company said it has achieved a channel mobility of 72cm2/Vs in […]
Driving down the on resistance of silicon carbide transistors
https://www.electronics-lab.com/driving-resistance-silicon-carbide-transistors/
UnitedSiC has developed silicon carbide transistors in standard packages with the world’s lowest on resistance. Chris Dries, CEO, talks to Nick Flaherty about the significance of the move. UnitedSiC has launched four silicon carbide SiC transistors with the world’s lowest on resistance RDS(on) to open up new applications. “What we are doing is pretty incredible […]