ON Semiconductor NTx015N065SC1 silicon carbide MOSFET

ON Semiconductor NTx015N065SC1 silicon carbide MOSFET

1351
Views
0 Comments

Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology

Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level. Benefits for systems employing Silicon Carbide devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.

Key features

  • Rated to 650 V
  • Typical RDS(ON) of 15 mΩ
  • D2PAK and TO247 Packages
  • Industrial and Automotive Grade versions

Additional features

  • Superior characteristics over conventional traditional Silicon technology
  • D2PAK 7-lead package
  • TO247 4-lead package
  • High Junction Temperature Tj = 175C
  • 100% UIL Tested
  • Pb-Free and RoHS Compliant
  • AEC Qualified and PPAP Capable NV-suffix versions available

more information: https://www.onsemi.com/products/wide-bandgap/silicon-carbide-sic-mosfets/ntbg015n065sc1

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

view all posts by admin
Subscribe
Notify of
guest
0 Comments
Inline Feedbacks
View all comments
Archives