ON Semiconductor NTx015N065SC1 silicon carbide MOSFET
Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level.
Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology
Silicon Carbide Technology has a better thermal conductivity (3x times) and a higher breakdown field strength (10x times) over traditional Silicon technology. This enables higher current density, lower capacitance hence faster-switching frequency, and low ON-resistance at a device level. Benefits for systems employing Silicon Carbide devices are consequently reduced losses, higher temperature operation, and optimized system size & weight performance.
Key features
- Rated to 650 V
- Typical RDS(ON) of 15 mΩ
- D2PAK and TO247 Packages
- Industrial and Automotive Grade versions
Additional features
- Superior characteristics over conventional traditional Silicon technology
- D2PAK 7-lead package
- TO247 4-lead package
- High Junction Temperature Tj = 175C
- 100% UIL Tested
- Pb-Free and RoHS Compliant
- AEC Qualified and PPAP Capable NV-suffix versions available
more information: https://www.onsemi.com/products/wide-bandgap/silicon-carbide-sic-mosfets/ntbg015n065sc1
