Broadcom AFBR-S4N66C013 NUV-HD single silicon photo multiplier

Broadcom AFBR-S4N66C013 NUV-HD single silicon photo multiplier

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The Broadcom® AFBR-S4N66C013 is a single silicon photo multiplier (SiPM) used for ultra-sensitive precision measurement of single photons.

The active area is 6.14 × 6.14 mm2

Key features

  • High PDE of more than 55% at 420 nm
  • High fill factors
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage

Additional features

High packing density of the single chips is achieved using through-silicon-via (TSV) technology. Larger areas can be covered by tiling multiple AFBR-S4N66C013 chips to an array almost without any edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.

Features:

  • High PDE of more than 55% at 420 nm
  • High fill factors
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage
  • Excellent uniformity of gain
  • With TSV technology (4-side tilable)
  • Size 6.14 × 6.14 mm2 n Cell pitch 30 × 30 μm2
  • Highly transparent glass protection layer
  • Operating temperature range from –40°C to +85°C
  • RoHS and REACH compliant

Applications

  • X-ray and gamma ray detection
  • Gamma ray spectroscopy
  • Safety and security
  • Nuclear medicine
  • Positron emission tomography
  • Life sciences n Flow cytometry
  • Fluorescence – luminescence measurements
  • Time correlated single photon counting
  • High energy physics
  • Astrophysics

Mike is the founder and editor of Electronics-Lab.com, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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