All-silicon reference design covers 45-W fast charging circuit
USB

All-silicon reference design covers 45-W fast charging circuit

Silanna Semiconductor has further expanded its family of silicon- and GaN-based fast charger reference designs with an all-silicon option that will significantly reduce the time needed to develop high-density 45W applications. Supplied as a fully production-ready solution, the new RD-24...

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Book Release: GaN Power Devices and Applications
Books

Book Release: GaN Power Devices and Applications

The book "GaN power devices and applications" is a guide for designers dealing with GaN devices written by Alex Lidow, founder and CEO of EPC. This company manufactures GaN power transistors. The book was written with input from about 30 experts in power conversion...

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PMP22650 – GaN-based, 6.6-kW, bidirectional, onboard charger reference design
Power

PMP22650 – GaN-based, 6.6-kW, bidirectional, onboard charger reference design

The PMP22650 reference design is a 6.6-kW, bidirectional, onboard charger. The design employs a two-phase totem pole PFC and a full-bridge CLLLC converter with synchronous rectification. The CLLLC utilizes both frequency and phase modulation to regulate the output across the required...

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Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) RF GaN Switch
IC

Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) RF GaN Switch

Qorvo QPC1006 Single-Pole, Triple–Throw (SP3T) Switch is fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8GHz, the QPC1006 typically supports 50W input power handling at control voltages of 0/−40V for CW and pulsed RF operations. This...

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EPC2216 – 15 V GaN Power Transistor
Parts

EPC2216 – 15 V GaN Power Transistor

The EPC2216 from Efficient Power Conversion is a GaN Transistor with Gate Threshold Voltage 0.7 to 2.5 V, Drain Source Voltage 15 V, Drain Source Resistance 20 to 26 milli-ohm, Continous Drain Current 3.4 A, Pulsed Drain Current 28 A. Specifications Configuration: Single...

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STDRIVEG600 Gate Driver for GaN Transistors
IC

STDRIVEG600 Gate Driver for GaN Transistors

STMicroelectronics' single-chip half-bridge gate driver is designed for enhancement mode GaN FETs or N-channel power MOSFETs STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is...

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TA9410E RF GaN Transistor is ideal for radio applications
Parts

TA9410E RF GaN Transistor is ideal for radio applications

Tagore’s transistor is ideal for radio applications such as public safety radios and EW radios. Tagore's TA9410E is a broadband 50 V, 25 W GaN transistor capable of operating from 20 M to 3 GHz. Using a simple input/output match, it can be tuned for various bands of interest....

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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board
Parts

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board

EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation...

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