AspenCore Book Highlights GaN’s role for the New Power Electronics World
Books

AspenCore Book Highlights GaN’s role for the New Power Electronics World

Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s new book, the “AspenCore Guide to Gallium Nitride: A New Era for Power Electronics,” answers those questions and more. WBG power semiconductor devices in silicon carbide and GaN technology provide design...

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MPS taps EPC for 48V GaN DC-DC converter
Power

MPS taps EPC for 48V GaN DC-DC converter

The combination of MPS (Monolithic Power Systems) controllers with ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 1700 W/in3 in high efficiency, low cost LLC DC-DC Conversion Monolithic Power Systems, Inc. (MPS), a leading...

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EPC2218 Enhancement-Mode GaN Power Transistors
Parts

EPC2218 Enhancement-Mode GaN Power Transistors

EPC's 3.2 mΩ, 100 V, 231 Apulsed GaN transistor provides power efficiency and switching frequency EPC's EPC2218 transistors and development/evaluation boards supply 100 V, 60 A, and 231 APULSED enhancement-mode GaN FETs. The transistors are only supplied in passivated die form with...

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Aledia – Pioneering nanowire microLED’s on 300 mm Wafers
Technology

Aledia – Pioneering nanowire microLED’s on 300 mm Wafers

We talk a lot about downsizing. It is, and always will be on the top priority list of the world of electronics. Without smaller sizes, we would never have gotten to this state, where our projects can be housed in a small PCB and ran on an ATTiny mcu. It is one of the most fascinating...

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Nexperia Releases New GaN FET Devices
Parts

Nexperia Releases New GaN FET Devices

Nexperia released a new set of GaN FET devices (650 V GAN041-650WSB in TO-247 and GAN039-650NBB in CCPAK) that feature the company’s high-voltage GaN HEMT H2 technology in both TO-247 and the company's proprietary CCPAK surface mount packaging. The cascode within the devices allows...

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Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs
Parts

Gallium Nitride FETs from Nexperia are efficient and effective high-power FETs

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design...

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Let Ugreen all-in-one 4-Port 65W GaN fast charger solve all your worries
Products

Let Ugreen all-in-one 4-Port 65W GaN fast charger solve all your worries

Highlights: Essential for Travel/Office/Home One charger solves all the troubles. No need to bring multiple charging adapters when travelling; No worries about the large size of the traditional multi-port charger, which is not convenient for carrying. Work easily, no...

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Single-Ended, 2-Channel GaN Class D Amplifier – Evaluation Board
Audio

Single-Ended, 2-Channel GaN Class D Amplifier – Evaluation Board

The EVAL_AUDAMP24 e-mode GaN HEMT-based evaluation board from Infineon Technologies is a 2-channel, 225W/ch (4Ω at ±43V) or 250 W/ch (8Ω at ±63V) half-bridge class D audio power amplifier for high-end Hi-Fi audio systems. This evaluation board demonstrates how to use the IGT40R070D1...

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