Murata develops silicon capacitor with <40 µm profile

Murata develops silicon capacitor with <40 µm profile

Murata has developed a silicon process technology capable of fabricating silicon capacitors with a density of 1.3 µF/mm².

Intended for the mobile and high-performance computing (HPC) markets these devices have an extremely low ESL (few pH) and low ESR (few mΩ) which support the high performance of new power distribution networks (PDN) that require low impedance over a wide frequency bandwidth.

As digital ICs evolve to offer more features at lower voltages, resolving issues like noise and voltage fluctuation is critical, so with its <40 µm profile chip designer engineers will be able to embed the silicon capacitor into the package as close to the active die as possible, minimizing the current’s effective path length and reducing parasitics.

These multi-terminal devices satisfy the various SoC and microprocessor design requirements for multiple terminal capacitor networks. Replacing conventional monolithic ceramic capacitors with multi-terminal silicon devices reduces the total quantity of capacitors required on the board significantly and will help to improve the overall compactness of the end design.

Fewer capacitors will also result in total savings in both bills of materials and mounting costs.

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Mike is the founder and editor of, an electronics engineering community/news and project sharing platform. He studied Electronics and Physics and enjoys everything that has moving electrons and fun. His interests lying on solar cells, microcontrollers and switchmode power supplies. Feel free to reach him for feedback, random tips or just to say hello :-)

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